PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film, specifications are as follows:
1. Specifications of Coated Silicon Wafer
Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal
SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate [...]
2019-04-29meta-author
Silicon carbide (SiC) is a hot research material in the field of quantum information technology. For example, defect vacancies in SiC (composed of silicon vacancies and adjacent carbon vacancies, hereinafter referred to as VV) have many advantages of NV centers in diamond, including triple [...]
2024-04-23meta-author
PAM XIAMEN offers 1654nm laser diode wafers.
Available Center Wavelengths: 1640nm – 1670nm
Wavelength Tolerance: +/- 1nm
CW Output Power (typical): 8mW (out of fiber)
SMSR (typical): >40 dB
Optical Linewidth: < 1.5 MHz
Temperature Tuning Coefficient (typical): 0.1 nm/°C
Current Tuning Coefficient (typical): 10 pm/mA
Slope Efficiency (typical): 0.10 mW/mA
For more [...]
2019-03-13meta-author
PAM-XIAMEN has silicon boule for sale, which is a raw material for semiconductor silicon device manufacturing, making high-power rectifiers, high-power transistors, diodes, switching devices, and etc. The monocrystalline silicon crystal with a basically complete lattice structure has a band gap of 1.11eV. Single crystalline silicon with different [...]
2021-07-05meta-author
PAM XIAMEN offers 1″&1.5″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
25.4
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
Intrinsic
Undoped
FZ
-100
> 20000
275-325
P/E
PRIME
25.4
N
Sb
CZ
-100
.5-40
200-250
P/E
PRIME
25.4
N
Sb
CZ
-100
5-40
225-275
P/E
PRIME
25.4
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
25.4
Shipping Cassette
ePak
Holds25Wafers
Clean Room
38.1
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-02-27meta-author
PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns.
PG ribbon thickness 0.05mm
Main Heating Zones
Front surface:
Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Auxiliary Heating Zones
Back surface:
Outer element [...]
2019-03-13meta-author