PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com.
2020-03-10meta-author
PAM-XIAMEN offers R-Plane(1-102) Sapphire Substrate, single side polished,please see below spec:
2”,R-Plane Sapphire Substrate with SSP
No
Item
Specification
1
Material
High Purity Al2O3
2
Diameter
50.8土0.1mm
3
Orientation
R-plane<1-102>土0.2°
4
Thickness
430土15um
5
TTV
≤15um
6
Bow
≤10um
7
Warp
≤15um
8
Primary Flat Length
16.0土1.0mm
9
Front suface Roughmess(Ra)
Ra≤0.3nm
10
Bock Surtace Roughness(Ra)
0.8~1.2um
11
Primary Flat Orienation
A-plane+0.2°
12
Surtace onentation
R-Plane土0.2°
13
Laser Mark
back side or front side or no laser mark
14
Package
25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom
3”,R-Plane Sapphire Substrate with SSP
No
ltem
Specification
1
Material
High Purity Al2O3
2
Diameter
76.2土0.2mm
3
Thickness
350土25um
4
Orientation
R-plane<1-102>土0.2°
5
Primary Flat Orientation
45+2CCCW [...]
2020-05-21meta-author
Silicon-on-insulator (SOI) wafer is one of the most appealing platforms for optical integrated circuit with the potential to realize high performance Ultra Large Scale Integration (ULSI) and device miniaturization. In this work, based on simulations to obtain appropriate optical properties of a porous silicon [...]
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers the highest purity InGaAs / InP Epitaxial Wafer in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality InP (Indium Phosphide) Epitaxial wafers up to 4 inches with wavelengths from 1.7 to 2.6μm, [...]
PAM XIAMEN offers 2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm
2inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 50.8mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns (the value is unchanged)
Thickness of the isolation oxide: at least 20 nm
Front side: polished
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
We report new and exciting experimental results on ion-induced nanopatterning of a-Si and a-Ge surfaces. The crystalline Si (100) and Ge (100) wafers were amorphized and an a/c interface was developed by pre-irradiation with a 50 keV Ar+ beam at normal incidence with an [...]
2019-07-08meta-author