For the produced thin film, among its many properties, the thickness and uniformity of the film are the most critical parameters. Therefore, monitoring and controlling the thickness and uniformity of thin films has become an important and indispensable part of industrial production. If you [...]
2022-09-09meta-author
Photomask blank with antireflective chromium is available. Photomasks are mainly used in integrated circuits, flat panel displays (including LCD, LED, OLED), printed circuit boards and other fields. The photomask is a pattern master used in the photolithography process in microelectronics manufacturing. Here are specifications [...]
2021-11-09meta-author
Measurement of thickness profile and refractive index variation of a silicon wafer using the optical comb of a femtosecond pulse laser
We developed a method to measure the thickness profile and refractive index variation for silicon wafers based on a spectral-domain interferometry. Through a spectral [...]
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
c doped
c [...]
2020-05-26meta-author
PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm
4inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 101.6mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished.
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm.
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-03meta-author