Chloride-based SiC growth on a-axis 4H-SiC substrates
SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H-SiC substrates at a growth rate of View the MathML source using silane (SiH4) and propane (C3H8) or ethylene...