SiC wafers are available for power electronics, scientific or industrial applications, specifications as: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html SiC is a binary compound formed in a 1:1 ratio of Si and C elements, consisting of 50% silicon (Si) and 50% carbon (C). Its basic structural unit is the Si-C tetrahedron. 1. SiC Crystal Structure Arrangement 1.1 [...]
SiC epitaxial wafer is available for fabricating MOSFET devices, wafer specifications can be found in https://www.powerwaywafer.com/sic-mosfet-structure.html 1. Epitaxial Pits Epitaxial pits, as one of the most common surface morphology defects, have a typical surface morphology and structural profile as shown in Fig.1. The position of thread dislocation (TD) corrosion pits observed [...]
SiC wafer materials have broad bandgap, high electron saturation mobility, and excellent thermal properties, which have great application prospects in high-temperature, high-frequency, and high-power devices. The surface quality of Si surface directly affects the quality of SiC epitaxial thin film and the performance of its devices. However, defects on [...]
PAM-XIAMEN is available to offer P-type SiC substrates, please refer to: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. The p-type substrate prepared by liquid-phase method can be applied to prepare IGBT devices and bipolar devices, solving the problem of missing p-type substrates in the SiC industry. At present, significant breakthroughs have been made in this field both domestically and [...]
PAM-XIAMEN can offered SiC wafers, specific specifications and parameters can be found in: https://www.powerwaywafer.com/sic-wafer 4H-SiC single crystal has excellent characteristics such as wide bandgap, high carrier mobility, high thermal conductivity, and good stability. It has broad application prospects in high-power electronics, radio frequency/microwave electronics, and quantum information. After years of development, 6-inch [...]
PAM-XIAMEN can supply SiC epitaxial wafers for MOSFET devices, additional information please read: https://www.powerwaywafer.com/sic-mosfet-structure.html. The epitaxial process of SiC inevitably forms various defects, which affect the performance and reliability of SiC power devices. Below, we specifically explore the impact of triangle defects on the performance of SiC MOSFET devices. 1. [...]
Static induction transistor (SIT) is a type of junction field-effect transistor. It is a unipolar voltage control device developed on the basis of ordinary junction field-effect transistors, with three electrodes: active, gate, and drain. Its source drain current is controlled by an external vertical electric field on the gate. SIT transistor is [...]
Compared to 4H-SiC, although the bandgap of 3C silicon carbide (3C SiC) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-SiC. Moreover, the defect density at the interface between the insulating oxide gate and 3C-SiC is lower, which is more conducive to manufacturing high-voltage, [...]
SiC wafer can be used to manufacture BJT (bipolar junction transistor) devices with low conduction resistance and high blocking voltage up to tens of kilovolts. For applications with a blocking voltage of 4.5kV and higher, bipolar SiC power devices will have more practical application value than unipolar SiC power devices. Compared with most field-effect [...]
MESFET (Metal-Semiconductor Field Effect Transistor) is a field-effect transistor composed of Schottky barrier gates. SiC microwave MESFET was developed between 1995 and 2002 to replace GaAs microwave field effect transistors (FETs). There are three types of substrate materials used conductive substrate (n+- SiC), high-purity semi insulating substrate (SI SiC), or insulating substrate [...]
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