Single Crystal
| CeO2 Crystal | Fe3O4 Crystal | SnO2 Crystal | Cu2O Crystal |
| Fe2O3 Crystal | MnO Crystal | PrScO3 Crystal Substrate | NdScO3 Crystal Substrate |
| NdScO3 Crystal Substrate | GdScO3 Crystal Substrate | DyScO3 Crystal Substrate | SOI Wafer |
| Ti Terminal SrTiO3 | HOPG（highly oriented pyrolytic graphite） | ZnO/cAl2O3 Film | AIN on Sapphire Wafer |
We provide series of grapheme 2D systems for grapheme,CNT and other 2D material growth. and offer the most efficient Chemical Vapor Deposition (CVD) system for graphene growth (is compatible for both LPCVD and APCVD growth). We also can adjust each of these standard systems [...]
PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP GaSb Wafer Substrate – Gallium Antimonide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 GaSb (100)±0.5 50.8 500±25 SSP N/A Te 1E17 – 5E18 N/A < 1000 1-100 GaSb (111)A±0.5 50.8 500±25 SSP N/A Te 1E17 – 5E18 N/A < 1000 1-100 GaSb (111)B 50.8 N/A N/A N/A Te (5-8)E17 N/A N/A 1-100 GaSb (111)B 50.8 N/A N/A N/A Undoped none N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A P/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/Te (1-8)E17/(2-7)E16 N/A < 1000 1-100 GaSb (100) 50.8 450±25 SSP N/A N/A (1-1.2)E17 N/A N/A 1-100 GaSb (100) 50.8 350±25 SSP N/A N/A N/A N/A N/A 1-100 GaSb (100) 76.8 500-600 N/A N/A Undoped none N/A N/A 1-100 GaSb (100) 100 800±25 DSP N/A P/Zn N/A N/A N/A 1-100 GaSb (100) 100 250±25 N/A N/A P/ZnO N/A N/A N/A As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team 1)2″,3″GaSb wafer Orientation:(100)±0.5° Thickness(μm):500±25;600±25 Type/Dopant:P/undoped;P/Si;P/Zn Nc(cm-3):(1~2)E17 Mobility（cm2/V ·s):600~700 Growth [...]
You can buy silicon epi wafer from PAM-XIAMEN, an epitaxial wafer supplier you want to find, which can offer silicon epi wafer or custom silicon epi wafer. The size we can offer is 2”, 4”, 5”, 6” or 8”. More details please see the wafer list of Si epi wafers [...]
SAPPHIRE WAFERS 2 INCH ALUMINUM NITRIDE ALN TEMPLATE ON SAPPHIRE BARIUM FLUORIDE BAF2 CRYSTAL BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES BGO BISMUTH GERMANATE BI4GE3O12 SCINTILLATION CRYSTAL CRYSTALS GRAPHENE CVD FILMS AND GRAPHENE OXIDE EU DOPED CALCIUM FLUORIDE EU: CAF2 CRYSTAL NON-LINEAR CRYSTAL CA4YO(BO3)3 YCOB CERIUM FLUORIDE CEF3 CRYSTAL CSI CESIUM IODIDE SCINTILLATION CRYSTAL [...]
Silicon Wafer Si wafer Substrate -Silicon Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 Si N/A 25.4 280 SSP 1-100 P/b N/A N/A N/A 1-100 Si N/A 25.4 280 SSP 1-100 P/b (1-200)E16 N/A N/A 1-100 Si (100) 25.4 525 N/A <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si with Oxide layer (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 350-500 SSP 1~10 N/A N/A N/A N/A 1-100 Si (100) 25.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 Si (100) 50.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 p-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 P/ N/A N/A N/A 1-100 n-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 p-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 n-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 Si with electrodes (100) 50.8 400 N/A <0.05 N/p 1E14-1E15 N/A N/A 1-100 Si (100) 50.8 275 SSP 1~10 N/A N/A N/A N/A 1-100 Si (100) 50.8 275±25 SSP 1~10 N/p N/A N/A N/A 1-100 Si (111) 50.8 350±15 SSP >10000 N/A N/A N/A N/A 1-100 Si (100) 50.8 430±15 SSP 5000-8000 N/A N/A N/A N/A 1-100 Si (111) 50.8 410±15 SSP 1~20 N/A N/A N/A N/A 1-100 Si (111) 50.8 400-500 SSP >5000 N/A N/A N/A N/A 1-100 Si (100) 50.8 525±25 SSP 1~50 N/A N/A N/A N/A 1-100 Si (100) 50.8 500±25 SSP 1~10 N P N/A N/A N/A 1-100 Si (100) 50.8 500±25 P/P >700 P/ N/A N/A N/A 1-100 Si (100) 76.2 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 p-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 P/ N/A N/A N/A 1-100 n-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 p-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 n-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 Si (100) 100 625 SSP >10000 N/A N/A N/A N/A 1-100 Si (100) 100 525 SSP N/A N/P N/A N/A N/A 1-100 Si (100) 100 320 SSP >2500ohm·cm P/b N/A N/A N/A 1-100 Si (100) 100 N/A SSP 10~30 N/p N/A N/A N/A 1-100 Si (100) 100 505±25 SSP 0.005-0.20 N/P-doped N/A N/A N/A 1-100 Si (100) 100 381 SSP 0.005-0.20 N/P-doped N/A N/A N/A 1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A 1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A 1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A 1-100 Si [...]
Silicon Wafer with thermal oxidation or Wet and Dry Thermal Oxide (SiO2) are in Stock,oxidation film(SiO2)can be custom In Stock, But Not Limited To The Following. Wafer No.c Wafer Size Polished /oxidation sides Type/Orientation Wafer Thickness(um) oxidation thickness Resistivity(Ohm.cm) Quantity(pcs) PAM-XIAMEN-WAFER-#O01 1″ SSP, both oxidation P100 525±10 300nm <0.005 290 PAM-XIAMEN-WAFER-#O02 2″ SSP, both oxidation P100 500±20 3um 1-10 24 PAM-XIAMEN-WAFER-#O03 2″ DSP, both oxidation N100 285±15 1um 1-10 50 PAM-XIAMEN-WAFER-#O04 2″ SSP, both oxidation P100 430±10 300nm <0.005 5 PAM-XIAMEN-WAFER-#O05 3″ SSP, both oxidation 100 400±10 2um >10000 20 PAM-XIAMEN-WAFER-#O06 4″ SSP, both oxidation 100 400±10 2um >10000 25 PAM-XIAMEN-WAFER-#O07 4″ SSP, both [...]
