Single Crystal
| CeO2 Crystal | Fe3O4 Crystal | SnO2 Crystal | Cu2O Crystal |
| Fe2O3 Crystal | MnO Crystal | PrScO3 Crystal Substrate | NdScO3 Crystal Substrate |
| NdScO3 Crystal Substrate | GdScO3 Crystal Substrate | DyScO3 Crystal Substrate | SOI Wafer |
| Ti Terminal SrTiO3 | HOPG（highly oriented pyrolytic graphite） | ZnO/cAl2O3 Film | AIN on Sapphire Wafer |
We provide series of grapheme 2D systems for grapheme,CNT and other 2D material growth. and offer the most efficient Chemical Vapor Deposition (CVD) system for graphene growth (is compatible for both LPCVD and APCVD growth). We also can adjust each of these standard systems [...]
Lithium Niobate(LN) Thin Film on Insulator Single crystal Lithium Niobate(LN) films can be integrated on lithium niobate substrate. The structure can be used in electro-optic modulators, optical waveguides, resonators, SAW devices, FRAM memory devices, etc. Single crystal lithium niobate thin films are of great significance for the development of [...]
PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP GaSb Wafer Substrate – Gallium Antimonide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 GaSb (100)±0.5 50.8 500±25 SSP N/A Te 1E17 – 5E18 N/A < 1000 1-100 GaSb (111)A±0.5 50.8 500±25 SSP N/A Te 1E17 – 5E18 N/A < 1000 1-100 GaSb (111)B 50.8 N/A N/A N/A Te (5-8)E17 N/A N/A 1-100 GaSb (111)B 50.8 N/A N/A N/A Undoped none N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A P/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/Te (1-8)E17/(2-7)E16 N/A < 1000 1-100 GaSb (100) 50.8 450±25 SSP N/A N/A (1-1.2)E17 N/A N/A 1-100 GaSb (100) 50.8 350±25 SSP N/A N/A N/A N/A N/A 1-100 GaSb (100) 76.8 500-600 N/A N/A Undoped none N/A N/A 1-100 GaSb (100) 100 800±25 DSP N/A P/Zn N/A N/A N/A 1-100 GaSb (100) 100 250±25 N/A N/A P/ZnO N/A N/A N/A As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team 1)2″,3″GaSb wafer Orientation:(100)±0.5° Thickness(μm):500±25;600±25 Type/Dopant:P/undoped;P/Si;P/Zn Nc(cm-3):(1~2)E17 Mobility（cm2/V ·s):600~700 Growth [...]
Nitride Semiconductor Wafer Free-standing Gallium Nitride Item No. Type Orientation Thickness Grade Micro Defect Density Surface Usable area N-Type PAM-FS-GaN50-N 2″ N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN45-N dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN40-N dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN38-N dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN25-N dia.25.4mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN15-N 14mm*15mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN10-N 10mm*10.5mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN5-N 5mm*5.5mm, N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% SEMI-INSULATING PAM-FS-GaN50-SI 2″ N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN45-SI dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN40-SI dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P [...]
E-beam and thermal evaporation of metal coatings (Ti, Cr, Au, Pt, Pd, Al, Cu, Ag etc) on our silicon wafers Pt, Ru, Pd, Au, Ag, Co, Ti, Cu, Al, Ta, and Ni with thickness ranging from 10nm to 2.2um metal Sputtering includes single layer and/or the [...]
Substrates for III-V nitride Film Deposition Crystal Structure M.P. Density Lattice Mis-match to GaN Thermal Expansion Growth Tech. .& Max size Standard substrate size (mm) oC g/cm3 (10-6/k) SiC (6H as example) Hexagonal ~2700 3.21 3.5 % atori. 10.3 CVD Ø2″ x 0.3,Ø3″x0.3 a=3.073 Å 20x20x0.3,15x15x0.3 c=15.117 Å Ø3“ 10x10x0.3,5x5x0.3 subl. 1 side epi polished Al2O3 Hexagonal 2030 3.97 14% atori. 7.5 CZ Ø50 x 0.33 a=4.758 Å Ø25 x 0.50 c=12.99 Å Ø2” 10x10x0.5 1 or 2 sides epi polished LiAlO2 Tetragonal 1900 ~ 2.62 1.4 % atori. / CZ 10x10x0.5 a=5.17 Å Ø20 [...]
