Structural modification and bandgap tunning of cubic AlN thin film by carbon ions irradiations

Structural modification and bandgap tunning of cubic AlN thin film by carbon ions irradiations

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,  Shandong Univerity, university of south carolina,Caltech Faraon lab (USA,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.

And now we show one article example as follows, who bought our wafers or service:

Article title:Structural modification and bandgap tunning of cubic AlN thin film by carbon ions irradiations

Published by:

Shakil Khan ; Ishaq Ahmad ; M. Hassan Raza ; Khizar-ul-Haq ; Ting-kai Zhao ; Fabian I. Ezema.

1.Department of Metallurgy and Materials EngineeringPakistan Institute of Engineering and Applied SciencesIslamabadPakistan
2.Experimental Physics Laboratory, National Centre for PhysicsQuaid-i-Azam UniversityIslamabadPakistan
3.Department of Physics, Faculty of SciencesMirpur University of Science and TechnologyMirpurPakistan
4.NPU-NCP Joint International Research Center for Advanced Nanomaterials and Defects EngineeringNorthwestern Polytechnical UniversityXi’anChina
5.School of Materials Science & EngineeringNorthwestern Polytechnical UniversityXi’anChina
6.Department of Physics & AstronomyUniversity of NigeriaNsukkaNigeria
7.UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate StudiesUniversity of South AfricaPretoriaSouth Africa


This paper deals with the 700 keV energetic Carbon (C) ions irradiations induced structrual modification and optical bandgap tunning of cubic (c) AlN thin films. MOCVD grown c-AlN thin film has been exposed to C ions at various ions fluences of 1 × 1013, 1 × 1014 and 1 × 1015−2. XRD patterns exhibited that films retain their cubic crystal structure after ions irradiations, indicating their structural stability against irradiation. Full width at half maximum of the XRD peaks remains almost same for pristine and irradiated films. Ions irradiations at fluence of 1 × 1014 ions/cm2, produces compressive stresses as observed from the shifts in (220) orientation peaks. However, its pristine position is restored with a further rise of ions fluence to 1 × 1015 ions/cm2, thereby relieving the induced stresses. Raman spectra also indicated that the stress produced at lower fluence are recovered with further increase of the fluence. The bandgap obtained from UV-visible optical transmission spectra also modulated with ions dose rate and is changed from 5.88 eV (for as grown) to 5.62 eV at maximum fluence.

Subject(s): AlN ; Ion irradiation ; XRD ; Raman spectroscopy .

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… 2 Experimental. AlN thin films grown on sapphire substrate by MOCVD method have been subjected to ions irradiations. The as grown film was purchased from Xiamen Powerway Advanced Material Co.,Ltd., China ( …”


About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Now PAM-XIAMEN offer GaN material including GaN substrate, GaN on sapphire, InGaN, InN, and AlN epitaxial wafer with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities. As well as GaN based LED wafer and AlGaN/GaN HEMT wafer.

PAM-XIAMEN also offer SiC and GaAs/InP material from wafer substrate to epitaxial growth.

Powerway Wafer Co.,Limited is a sub company of Xiamen Powerway Advanced Material Co., Ltd specialize in dealing with overseas orders.

Are You Looking for an Semiconductor wafer?

PAM-XIAMEN is your go-to place for everything wafers, including SiC/GaN/GaAs/InP wafer with wafer or epitaxial wafer, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you! For more information, please visit our, send us email at  or

Share this post