Phosphorus-containing III-V compounds are the preferred materials for millimeter-wave and submillimeter-wave devices and circuits, optoelectronic devices, and solar cells. InGaP lattice matched to GaAs has a direct band gap of 1.9eV at room temperature, which is a highly efficient light-emitting material. We are pleased [...]
2017-10-11meta-author
PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas.
1. Charge Sensitive Pre-amplifier Specification
Power Consumption
<0.43W
Power
±12V
Output Resistance
50 Ω
Equivalent Noise
ENC: 130e–
Working temperature
-20℃-+40℃
Falling edge time
250 ~ 400us
Input charge range
<1000fc
Gain
G=10mv/fc
Dimension
100×76×44mm3
Weight
265g
2. Charge [...]
2019-04-25meta-author
PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure:
1. GaAs HEMT Epitaxial Wafer Structures
Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer (PAM200416-HEMT):
HEMT [...]
The most basic and key parameters of SiC epitaxial materials are the thickness and doping concentration uniformity.In fact, the epitaxial parameters mainly depend on the device design. For example, the epitaxial parameters are different according to the different voltage levels of the devices. Generally, [...]
2020-09-22meta-author
PAM XIAMEN offers Gallium Phosphate GaP Crystal and Substrate.
Main Parameters
Crystal structure
Cubic
Growth method
crystallization process
Crystal lattice parameters
a=5.642Å
Density
2.16(g/cm3)
Wave band
0.25~22.00um
Index of refraction
1.54427
T
0.9
Nf
0.0127
Surface roughness
<30A
orientation
<111>, <110>, <100>
size
10×10×2.0mm, 20*20*2.0mm, other sizes available upon request
polished
One side or double
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
2019-03-12meta-author
SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high temperature and high radiation field. It can be applied to neutron fluence/energy spectrum measurement in strong radiation field, neutron fluence/energy spectrum measurement in high temperature [...]
2022-09-06meta-author