PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3
We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as [...]
2012-12-07meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
P
Boron
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
P
Boron
FZ
-100
>3000
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/WTOx
76.2
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
76.2
P
Boron
CZ
-100
1-10
825-875
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
850-1000
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
76.2
P
Boron
CZ
-111
1-20
300-350
P/P
PRIME
76.2
P
Boron
CZ
-111
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
>100
275-325
P/P
PRIME
76.2
P
Boron
CZ
-110
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
100-200
800-850
P/P
PRIME
76.2
Any
Any
CZ
Any
Any
250-500
P/E
TEST
76.2
Any
Any
CZ
-100
1-100
330-430
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-100
> 15000
350-400
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-111
> 15000
350-400
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and [...]
2019-03-04meta-author
In this work we execute computational calculations to investigate the structural, electronic and magnetic properties of the GaN/MnN/GaN and MnN/GaN/MnN interlayers. The calculations were carried out by a method based on pseudopotentials, as implemented in the Quantum ESPRESSO code. For the description of the [...]
2019-09-27meta-author
Distribution of defects and impurities in gallium arsenide wafers after surface gettering
Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows [...]
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
21
n- Si:P
0.15
n/n+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
22±1.5
p- Si:B
300±50
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
6.85±0.75
p- Si:B
0.75±0.15
P/P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 ±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
80±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
200±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
32
p- Si:B
600 ±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.01-0.02
P/E
32.5
p- Si:B
100±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
40
p- Si:B
550 ±10%
P/P+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
p- Si:B
10±1.5
P/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author