P Type GaN Template
PAM-XIAMEN Offers p type GaN Template
Published on December,27, 2012
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template.
“Now we can offer wide range [...]
2012-12-27meta-author
PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.
Major capability parameter
Material purity
>99.995%
Crystal structure
M6
Unit cell constant
a=5.154Å c=13.783 Å
Melt point(℃)
1650
Density
7.45(g/cm3)
Hardness
5.5~6(mohs)
Color
Colorless
Index of refraction
no=2.176 ne=2.180 (633nm)
Through scope
0.4~5.0mm
Resistance coefficient
1015wm
Dielectric [...]
2019-03-13meta-author
PAM XIAMEN offers 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm
6inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 152.4mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
2100
P/E
1-100
SEMI Prime, Manual Edges
p-type Si:B
[100]
4″
3000
P/P
1-10
SEMI Prime
p-type Si:B
[100]
4″
3175
P/P
1-10
SEMI Prime, TTV<8μm
p-type Si:B
[100]
4″
3200
P/E
1-100
SEMI Prime, Sealed as group of 9 wafers
p-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Prime
p-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Prime
p-type Si:B
[100]
4″
5000
P/E
1-100
Prime, NO Flats
p-type Si:B
[100]
4″
890 ±15
P/P
0.5-10.0
SEMI TEST (Scratches), TTV<8μm
p-type Si:B
[100] ±0.2°
4″
300
P/P
0.1-0.3
SEMI Prime
p-type Si:B
[100] ±1°
4″
490 ±5
P/P
0.1-1.0
SEMI Prime, TTV<0.8μm
p-type Si:B
[100]
4″
525
P/E
0.1-0.2
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.095-0.130
SEMI Prime
p-type [...]
2019-03-05meta-author
PAM XIAMEN offers La3Ga5SiO14 crystals.
Langasite- La3Ga5SiO14 crystals is a new piezoelecrictric materials with the value of electromechanical coupling coefficient, which is, intermediate between this coefficient of a quartz crystal and that of lithium tantalate.
Characteristics\Crystals
Quartz, SiO2
Langasite, La3Ga5SiO14
Lithium tetraborate, Li2B2O3
Lithium tantalate, LiTaO3
Electromechanical Coupling Factor [...]
2019-05-07meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
500
P/P
1-100
SEMI Prime, TTV<1μm, With Lasermark
n-type Si:P
[100-4°]
4″
525
P/E/P
1-10
SEMI Prime
n-type Si:P
[100]
4″
600
P/P
1-100
SEMI Prime, TTV<2μm, Bow<20μm, Warp<30μm
n-type Si:P
[100]
4″
1000
P/P
1-20
SEMI Prime
n-type Si:P
[100]
4″
2500
P/P
1-100
SEMI Prime, Individual cst
n-type Si:Sb
[100]
4″
450
P/E
~0.03
SEMI Prime
n-type Si:Sb
[100]
4″
400
P/E
~0.02
SEMI Prime
n-type Si:Sb
[100] ±0.2°
4″
250
P/P
0.01-0.05
SEMI Prime
n-type Si:Sb
[100]
4″
310 ±15
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
600
P/E
0.01-0.03
Strange Flats
n-type Si:Sb
[100-4°]
4″
1500
P/E/P
0.005-0.030
SEMI Prime
n-type Si:Sb
[100]
4″
1500
P/E/P
0.001-0.030
SEMI Prime
n-type Si:P
[111]
4″
1500
P/E
>20
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI [...]
2019-03-06meta-author