PAM XIAMEN offers 12″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
12″
750
P/E
MCZ 1-100
TEST grade, SEMI notch, TTV<25µm
p-type Si:B
[100]
12″
775
P/P
MCZ 1-100
Prime, SEMI notch, TTV<3µm
p-type Si:B
[100]
12″
775
P/E
MCZ 1-100
Prime, SEMI notch,TTV<10µm
p-type Si:B
[100]
12″
775
P/P
0.01-0.02
Prime, SEMI notch,TTV<4µm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
2019-03-04meta-author
PAM XIAMEN offers Tempered Gorilla Glass.
The glass is great for strong and inexpensive screen displays.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-02-27meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
8
DSP
Phosphorus
N
100
0,0 ± 0,0
110 ± 1
0.0 ± 1.0°
1 – 5 Ohmcm
200 ± 0.5 mm
650 ± 5 µm
20
3
35
8
DSP
Phosphorus
N
100
0,0 ± 0,0
110 ± 1
0.0 ± 0.5°
0.7 – 5.0 [...]
2019-02-25meta-author
PAM XIAMEN offers LD Bare Bar for 880nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 880nm
Filling Factor: 30%
Output Power: 80W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers Coated Silicon wafer.
Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm
Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,5x5x0.5mmSSP, R:1-20 ohm.cm
Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm
Nickel<111> Film (100nm) [...]
2019-04-28meta-author
PAM XIAMEN offers GaN on Sapphire for Power.
1.1 GaN HEMT Structure on Sapphire for Power Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
~arc.sec
XRD(002)FWHM
~arc.sec
Sheet Resistivity
/
AFM RMS (nm)of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
0~30nm
Al composition
20-30%
In composition
17% for InAlN
GaN cap
/
AlGaN/(In)AlN barrier
/
AlN interlayer
/
GaN channel
/
C [...]
2019-05-17meta-author