Lithium Niobate(LN) Thin Film on Insulator
Single crystal Lithium Niobate(LN) films can be integrated on lithium niobate substrate. The structure can be used in electro-optic modulators, optical waveguides, resonators, SAW devices, FRAM memory devices, etc.
Single crystal lithium niobate thin films are of great significance for the development of [...]
2018-08-22meta-author
2019/2
Stoichiometric LPCVD Nitride on Silicon Wafers
Low Stress Nitride Silicon Wafers
Super Low Stress Nitron on Silicon Wafers
PECVD Nitride
Targeted Stress LPCVD Nitride
Silicon Nitride Waveguide – Substrates and Services Provided
Custom Silicon Wafers
Silicon Epi Wafers Sale
P-type silicon substrates
N-Type Silicon Substrates
Undoped Silicon Wafers
Float Zone Silicon Wafers
Ultra-Thinned Silicon Wafers
Solar [...]
2019-02-15meta-author
SAPPHIRE WAFERS
2 INCH ALUMINUM NITRIDE ALN TEMPLATE ON SAPPHIRE
BARIUM FLUORIDE BAF2 CRYSTAL
BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES
BGO BISMUTH GERMANATE BI4GE3O12 SCINTILLATION CRYSTAL CRYSTALS
GRAPHENE CVD FILMS AND GRAPHENE OXIDE
EU DOPED CALCIUM FLUORIDE EU: CAF2 CRYSTAL
NON-LINEAR CRYSTAL CA4YO(BO3)3 YCOB
CERIUM FLUORIDE CEF3 CRYSTAL
CSI CESIUM IODIDE SCINTILLATION CRYSTAL [...]
2019-03-12meta-author
Superconductor Substrates
Crystal
Structure
M.P.
Density
Thermal Expansion
Dielectric constant
Growth Tech. & max. size
standard 1or 2 sides epi polished wafer
oC
g/ cm3
LSAT
Cubic
1840
6.74
10
22
CZ
20x20x0.5mm
(LaAlO3)0.3 -(Sr2AlTaO8)0.7
a=3.868 Å
Ø35mm
10x10x0.5mm
LaAlO3
Rhombo.
2100
6.51
9.2
24.5
CZ
Ø3″x0.5mm
a=3.790 Å
Ø3″
Ø2″x0.5mm
c=13.11 Å
Ø1″x0.5mm
10x10x0.5mm
MgO
Cubic
2852
3.58
12.8
9.8
Flux
Ø2″x0.5mm
a=4.21 Å
Ø2″
10x10x0.5mm
NdGaO3
Orthor.
1600
7.57
7.8
25
CZ
Ø2″x0.5mm
a=5.43 Å
Ø2″
10x10x0.5mm
b=5.50 Å
c=7.71 Å
SrTiO3
Cubic
2080
5.12
10.4
300
vernuil
10x10x0.5mm
a=3.90 Å
Ø30mm
SrLaAlO4
Tetrag.
1650
16.8
CZ
10x10x0.5mm
a=3.756 Å
Ø20mm
c=12.63 Å
YAlO3
Orthor.
1870
4.88
2 ~ 10
16`20
CZ
10x10x0.5mm
a=5.176 Å b=5.307 Å
Ø30mm
c=7.355 Å
YSZ
Cubic
~2500
5.8
10.3
27
Flux
Ø2″x0.5mm
a=5.125 Å
Ø2″
10x10x0.5m
2018-07-10meta-author
Silicon Wafer with thermal oxidation or Wet and Dry Thermal Oxide (SiO2) are in Stock,oxidation film(SiO2)can be custom
In Stock, But Not Limited To The Following.
Wafer No.c
Wafer Size
Polished /oxidation sides
Type/Orientation
Wafer Thickness(um)
oxidation thickness
Resistivity(Ohm.cm)
Quantity(pcs)
PAM-XIAMEN-WAFER-#O01
1″
SSP, both oxidation
P100
525±10
300nm
<0.005
290
PAM-XIAMEN-WAFER-#O02
2″
SSP, both oxidation
P100
500±20
3um
1-10
24
PAM-XIAMEN-WAFER-#O03
2″
DSP, both oxidation
N100
285±15
1um
1-10
50
PAM-XIAMEN-WAFER-#O04
2″
SSP, both oxidation
P100
430±10
300nm
<0.005
5
PAM-XIAMEN-WAFER-#O05
3″
SSP, both oxidation
100
400±10
2um
>10000
20
PAM-XIAMEN-WAFER-#O06
4″
SSP, both oxidation
100
400±10
2um
>10000
25
PAM-XIAMEN-WAFER-#O07
4″
SSP, both [...]
2019-11-27meta-author
CZT Semiconductor Wafer
CdZnTe Wafer Substrate-Cadmium Zinc Telluride
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
FWHM
PCS
(mm)
(μm)
Ω·cm
1-100
CdZnTe
N/A
10×10
1000
DSP
>1E10
N
@59.5keV<7%
1-100
CdZnTe
N/A
10×10
2000
DSP
>1E10
N
@59.5keV<7%
1-100
CdZnTe
(111)
10×10
500
SSP
N/A
P
N/A
1-100
CdZnTe
(211)B
10X10
800
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
10X10
500
lapping
N/A
N/A
N/A
1-100
CdZnTe
N/A
10X10
500
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20X20
800
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20×20
5000
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20×20
2000
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20×20
3000
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
3X3
2000
DSP
N/A
N/A
N/A
As a CZT semiconductor wafer supplier,we offer CZT semiconductor wafer list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.