PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um，warp ≤30um One [...]
Lumenpulse Launches New Range of LED Architectural Downlights and Spotlights Lumenpulse (LMP.TO), a leading pure-play specification-grade LED lighting solutions provider, has launched Lumenalpha, an exceptional range of architectural downlights and spotlights, which sets new standards in performance, light quality, flexibility and lifetime. Available worldwide, the collection boasts over [...]
The wide band gap semiconductor materials represented by GaN and SiC have the advantages of fast electron saturation drift and strong radiation resistance, and have a wide range of applications in solid-state lighting, electronic power and mobile communications. Among them, solid-state lighting is of [...]
PAM XIAMEN offers ZnTe single crystal substrate. ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40 ZnTe, N type, (110) [...]
PAM XIAMEN offers 3″ Dummy grade silicon wafer Thickness:340-380μm. 3″ Dummy grade / Mechanical Grade silicon wafer, SSP. MUST be Single Side Polished and Single Crystal Silicon. Thickness 340-380μm, no scratch, no films, no etch patterns or residues For more information, please visit our [...]
PAM XIAMEN offers Silicon Ingots. Material Description FZ 2″Ø×38mm ingot, p-type Si:B[100]±2º, Ro:~2,900Ohmcm FZ 2″Ø×(392+342+304+263+250+175)mm ingots, p-type Si:B[111]±2º, (2,000-5,000)Ohmcm FZ 2″Ø×(100+87+86+85+85+84)mm ingots, n-type Si:P[111], (2,000-4,000) {2,166-3,835} Ohmcm FZ 2″Ø×26mm ground ingot, n-type Si:P[111]±2º, (5,000-13,000)Ohmcm, MCC Lifetime>1,100μs FZ 2″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, Ground, (6 ingots: 154mm, 117mm, 143mm, 100mm, 101mm, 100mm) FZ 2″Ø×(160+98)mm ingots, Intrinsic Si:-[111]±2º, Ro>12,000 [...]
