PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Gallium Arsenide(GaAs) Wafer with High Mobility We can offer Gallium Arsenide material with high mobility. Normally mobility of n type/Si doped GaAs is above 1000cm2/V.s, mobility of p type/Zn doped GaAs is above 50~120cm2/V.s,and mobility of undoped GaAs is require to above 3500cm2/V.s, but we [...]
PAM XIAMEN offers GaN SBD. Parmeters Specification BV 300~650 If 1~20 Operation temp. -55~150 Trr <10 Package type TO220-2L TO220-3L For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal [...]
The electrical characteristics of GaN p–n junctions grown on freestanding GaN substrates by metal–organic chemical vapor deposition were investigated. The current–voltage (I–V) characteristics of the GaN p–n diode showed relatively low values and, little temperature dependence of the reverse leakage current. The breakdown voltage [...]
GaAs(111) crystal wafer PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer: 1.Wafer List GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 [...]
PAM XIAMEN offers Thinned Silicon Wafers! We have them! In Stock and ready to ship! Free Standing Thin Silicon Wafers We offer freestanding super thin silicon wafers with thicknesses ranging from 5µm to 100µm and with diameters from 5mm to 6. The thin Silicon wafers are true mirror [...]
Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the growth, was melted at high temperature as the flux and [...]
