PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
PAM-XIAMEN offers undoped GaAs wafer, which is also called semi-insulating GaAs wafer. Undoped gallium arsenide wafer is applied to the field of microelectronics and mainly used to make radio frequency (RF) power devices. GaAs single crystal growth methods include VGF, VB, and LEC. No1.Undoped GaAs wafer, [...]
PAM XIAMEN offers Ga2O3 Beta Gallium Oxide Wafer and crystal Substrates SEMI-insulating type. SPECIFICATIONS: Crystal structure: Monoclinic Lattice parameter: a = 12.225 A b = 3.040 A c = 5.809 A β = 103.7 degree Melt point (℃): 1725 Density: 5.95（g/cm3） Dielectric constants: 10 Band Gap: 4.8 – 4.9 eV Conductivity: Semi-insulating Breakdown Voltage (V/cm): 8 MV/cm Available Size: 5 x 5 mm, 10 x 10 mm，Ф1″ (1 inch diameter). Special [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 40mm 250 P/E 1-100 SEMI Prime, Soft cst p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:Ga [100] 2″ 350 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 525 P/P 1-30 SEMI, p-type Si:B [100] 2″ 1000 P/P 1-10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 1-10 SEMI Prime p-type Si:B [100] 2″ 275 P/E 0.5-1.0 SEMI p-type Si:B [100] 2″ 3150 C/C >0.5 1Flat p-type Si:B [100] 2″ 280 P/P 0.4-0.6 SEMI Prime, p-type Si:B [100] 2″ 275 P/E 0.2-0.4 SEMI Prime, p-type Si:B [100] 2″ 279 P/P 0.08-0.12 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 3000 P/E 0.015-0.020 Groups of [...]
980 Single Mode Laser Chip (PAM200827-LD) PAM XIAMEN offers 980 Single Mode Laser Chip Powerwaywafer 980 Single mode laser chip property Minimum Typical Maximum Central Wavelength 969 974 979 nm 970 980 990 Output Power (mW) 300 400 500 Working Mode CW — — — Longitudinal mode Single — — — Spectrum Width — — — Emitter Width — — — Cavity Width (μm) 640 650 660 Cavity Length (μm) 4490 4500 4510 Cavity Thickness (μm) 115 125 135 Fast Axis Divergence(FWHM) 30 Deg — — — Slow Axis Divergence (FWHM) [...]
The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an [...]
