PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at [email protected] and [email protected]
Semi-insulating indium phosphide (formula: InP) wafer at prime grade for sale is dark gray crystal with a bandwidth (Eg=1.35 eV) at room temperature, a dissociation pressure of 2.75MPa at a melting point, an electron mobility of 4600cm2/(V·s), and a hole mobility of 150cm2/(V·s). PAM-XIAMEN [...]
The quasi-steady state photo conductance technique is employed to probe effective minority carrier lifetime (τ eff) modifications after integrating silver nanoparticles (Ag NPs) on n-type and p-type silicon wafers with a native oxide surface. Our observations reveal that τ eff modification is very sensitive [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm, p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, TTV<5µm, Bow<30µm, Warp<30µm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [...]
Figure 1: Cross-sectional diagram of the GaN-HEMT device Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 4″ 500 P/E FZ >10,000 Prime, TTV<5μm p-type Si:B [110] ±0.5° 4″ 200 P/P FZ 1-2 SEMI Prime p-type Si:B [110] ±0.5° 4″ 200 P/P FZ 1-2 Prime p-type Si:B [110] ±0.5° 4″ 200 P/P FZ 1-2 SEMI Prime, Extra 8 scratched wafers in cassette free of charge p-type Si:B [100] 4″ 220 ±10 P/E FZ >10,000 SEMI Prime p-type Si:B [100] 4″ 230 ±10 P/E FZ >10,000 SEMI Prime p-type Si:B [100-4° towards[110]] ±0.5° 4″ 525 P/E FZ >2,000 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 450 P/P FZ 1,000-2,000 SEMI Prime p-type Si:B [100] 4″ 420 C/C FZ 850-900 SEMI Prime p-type Si:B [100] 4″ 200 ±10 P/P FZ 100-120 SEMI Prime p-type Si:B [100] 4″ 250 P/P FZ 1-3 {0.97-1.01} SEMI [...]
PAM XIAMEN offers 1″ silicon wafers. If you don’t see what you need, pleaes email us your specs and quantity. Item Dia Thickness (um) Orientation Type Dopant Resistivity (Ohm-cm) Polish Remark PAM1901 25.4mm 20000um <111> P B >1000 DSP FZ PAM1902 25.4mm 400um <100> P B ANY SSP Thickness is: 400+/-100um. PAM1903 25.4mm 500um <100> ANY SSP Wafers have particles. Wafers sold “As-Is”. PAM1904 25.4mm 280um <111> Undoped Undoped >2000 SSP Intrinsic FZ PAM1905 25.4mm 73.5um <100> Undoped Undoped >5000 DSP FZ, Float Zone PAM1906 25.4mm 500um <100> P B .01-.05 DSP NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM1907 p-type Si:B [100] 1″ 280um P/E 0-100 ohm-cm SEMI, 1Flat, Soft cst PAM1908 Intrinsic Si:- [111] 1″ 280um P/E FZ [...]
