4″ CZ Prime Silicon Wafer Thickness 525±25µm

  • Home
  • News
  • 4″ CZ Prime Silicon Wafer Thickness 525±25µm

PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 525±25µm.

Si wafers
Dia 4″ x 525±25µm
Type n or p
PRIME
CZ
(100)
1-20 ohm.cm
SSP
Ra<0.5nm
With marking laser on the back side as follow : NMP platform 85279-X
X=1 to 25 (numbering)
NMP platform 85279-1
NMP platform 85279-2
NMP platform 85279-3
NMP platform 85279-4
NMP platform 85279-5
NMP platform 85279-6
NMP platform 85279-7
NMP platform 85279-8
NMP platform 85279-9
NMP platform 85279-10
NMP platform 85279-11
NMP platform 85279-12
NMP platform 85279-13
NMP platform 85279-14
NMP platform 85279-15
NMP platform 85279-16
NMP platform 85279-17
NMP platform 85279-18
NMP platform 85279-19
NMP platform 85279-20
NMP platform 85279-21
NMP platform 85279-22
NMP platform 85279-23
NMP platform 85279-24
NMP platform 85279-25

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

2019-07-01

Share this post

Related Posts

Silicon Epi Wafers Sale

Silicon Epi Wafers Sale PAM XIAMEN offers Silicon Epi Wafers.       6″ Epitaxial Silicon Wafers Item Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm PAM3197 6″Øx675μm n- Si:P[100] 0.001-0.002 P/EOx 0.016 n- Si:P 0.32-0.46 n/n+ 4″ Epitaxial Silicon Wafers Item Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm PAM3198 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 360 – 440 n/n+ PAM3199 4″Øx400μm p- Si:B[111] 0.01-0.10 P/E 6.5 p- Si:B 3.6±10% P/P/P+ 22±1.5 p- Si:B 300±50 PAM3200 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 8.1±1 p- Si:B 4.5±10% P/P/P+ 6.85±0.75 p- Si:B 0.75±0.15 PAM3201 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 10.5 p- Si:B 570±10% p/p+ PAM3202 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.15 ±10% P/P+ PAM3203 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.25±10% P/P+ PAM3204 4″Øx525μm p- Si:B[111] 0.001-0.005 P/E 20 p- Si:B 175±10% P/P+ PAM3205 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 21 p- Si:B 150 [...]

2019-02-15meta-author
Wafers Used to Deposit Thin Film Electronic Devices

PAM XIAMEN offers Wafers Used to Deposit Thin Film Electronic Devices . If you don’t see what you need then Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Our clients use Dry Thermal Oxide for making thin-film electronic devices. Client: “We are making thin-film [...]

2019-02-26meta-author
Mo – Molybdenum Substrates (polycrystalline)

PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline). General Properties  for Molybdenum Symbol                 Mo Atomic Number      42 Atomic Weight:      95.96 g/mol Crystal structure:   BCC Lattice constant at room temperature :   0.315 nm Density:                10.28 g/cm3 Melting Point:        2623 °C Boiling Point:         4639 °C Mo Polycrystalline Substrate: [...]

2019-05-08meta-author
4″ CZ Prime Silicon Wafer

PAM XIAMEN offers 4″CZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm, p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, TTV<5µm, Bow<30µm, Warp<30µm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]

2019-07-04meta-author
Yellow and Green Luminescence in a Freestanding GaN Template

Yellow and Green Luminescence in a Freestanding GaN Template We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV [...]

2012-09-04meta-author
3″ Silicon Wafer-12

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 3″ 1800 P/P 1-5 SEMI Prime, Individual cst n-type Si:P [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst n-type Si:Sb [100] 3″ 800 P/E 0.022-0.028 SEMI Prime n-type Si:Sb [100] 3″ 380 P/E 0.021-0.023 SEMI Prime n-type Si:Sb [100] 3″ 500 P/E 0.021-0.022 SEMI Prime n-type Si:As [100] 3″ 1000 P/E 0.001-0.005 SEMI Prime n-type Si:P [211] 3″ 450 P/P 50-65 SEMI Prime n-type Si:P [111-4°] 3″ 250 P/E 50-220 Prime, NO Flatst n-type Si:P [111] 3″ 10000 P/E 20-60 SEMI Prime, Individual cst n-type Si:P [111-3°] 3″ 380 P/E 19-25 SEMI Prime n-type Si:P [111-0.5° towards[110]] ±0.25° 3″ 1400 P/E >5 SEMI Prime, hard cst, LaserMark n-type Si:P [111] 3″ 6000 P/E 5-10 SEMI Prime, Individual cst n-type Si:P [111] 3″ 525 P/E 4.5-5.0 SEMI Prime n-type Si:P [111] 3″ 500 P/P 4-6 Prime, NO [...]

2019-03-06meta-author