Abstract
The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for [...]
2017-06-14meta-author
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 200um.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30 [...]
2019-06-28meta-author
Group III nitride materials are a kind of direct band gap materials, which have the advantages of wide band gap, strong chemical stability, high breakdown electric field and high thermal conductivity. They have broad application prospects in the fields of efficient light-emitting devices and [...]
2022-11-25meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
2100
P/E
1-100
SEMI Prime, Manual Edges
p-type Si:B
[100]
4″
3000
P/P
1-10
SEMI Prime
p-type Si:B
[100]
4″
3175
P/P
1-10
SEMI Prime, TTV<8μm
p-type Si:B
[100]
4″
3200
P/E
1-100
SEMI Prime, Sealed as group of 9 wafers
p-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Prime
p-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Prime
p-type Si:B
[100]
4″
5000
P/E
1-100
Prime, NO Flats
p-type Si:B
[100]
4″
890 ±15
P/P
0.5-10.0
SEMI TEST (Scratches), TTV<8μm
p-type Si:B
[100] ±0.2°
4″
300
P/P
0.1-0.3
SEMI Prime
p-type Si:B
[100] ±1°
4″
490 ±5
P/P
0.1-1.0
SEMI Prime, TTV<0.8μm
p-type Si:B
[100]
4″
525
P/E
0.1-0.2
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.095-0.130
SEMI Prime
p-type [...]
2019-03-05meta-author
PAM XIAMEN offers Fe2O3 crystal .
Alpha-Fe2O3 Crystal (0001) < 0.4deg, Edge oriented, 5x5x1.0mm,1SP
Specifications:
Crystal: Alpha-Fe2O3 natural source with defects
Purity: >99.95%
Size: [...]
2019-04-19meta-author
PAM XIAMEN offers (111) Silicon Wafers.
If you don’t see what you need then please email us your specs.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
7″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
8″
Intrinsic Si:-
[111] ±0.5°
750
E/E
FZ >10,000
SEMI notch, TEST (defects, [...]
2019-02-22meta-author