PAM XIAMEN offers 4″CZ Prime Silicon wafer-15
4″ CZ Silicon Wafer
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-12-30meta-author
The realization of low-dislocation-density bulk GaN crystals is necessary for use in the fabrication of future high-power devices with low power consumption. In this study, we attempted the regrowth of low-dislocation-density (104–105 cm−2) GaN substrates to fabricate thick and low-dislocation-density GaN crystals using the dipping [...]
2019-11-18meta-author
PAM-XIAMEN offers (20-2-1) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-2-1)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-09-02meta-author
PAM XIAMEN offers 8″ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/E 8″(200.0±0.2mm) Ø×1,000±25µm,
p-type Si:B[111]±0.5°, Ro: <100 Ohmcm,
TTV<6µm, Bow<60µm, Warp<60µm,
One-side-polished, Particles: ≤10@≥0.3µm,
Back-side etched, SEMI notch,
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-02meta-author
PAM XIAMEN offers 905nm laser diode wafers.
1. Specs of 905nm Laser Diode Wafer
1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS
Layer
Composition
Thickness
Concentration
13
P+ GaAs
/
/
12
P-AlGaAs cladding + waveguide
d~1.6um
/
11
Undoped GaInAs QW PL:880~900nm
/
/
10
N- AlGaAs cladding + waveguide
/
9
N++ GaAs/P++ GaAs Tunnel junction
/
/
8
P- AlGaAs cladding + waveguide
/
7
Undoped GaInAs QW PL:880~900nm
/
/
6
N- AlGaAs cladding [...]
2019-03-13meta-author
There are three basic types of semiconductor materials: intrinsic semiconductors, extrinsic semiconductors, also known as impurity semiconductors. Both types of semiconductor materials can be supplied by PAM-XIAMEN.
1. What Is Intrinsic Semiconductor?
Intrinsic semiconductor refers to a pure semiconductor that is completely free of impurities and [...]
2022-06-20meta-author