InGaAsN epitaxially on GaAs or InP wafers

InGaAsN epitaxially on GaAs or InP wafers
PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows:

Layer Doping Thickness (um)  Remark
GaAs  undoped ~500 <001> wafer substrate
InGaAsN*   undoped 0.150 band gap <1 eV
Al(0.3)Ga(0.7)As  undoped 0.5
GaAs             undoped 2
Al(0.3)Ga(0.7)As   undoped 0.5
             
ITEM x/y Doping carrier conc.(cm3) Thicknessum wave length(um) Lattice mismatch
InAs(y)P 0.25 none 5.0*10^16 1.0  
In(x)GaAs 0.63 none 1.0*10^17 3.0 1.9 600<>600
InAs(y)P 0.25 S 1.0*10^18 205.0  
InAs(y)P 0.05->0.25 S 1.0*10^18 4.0  
InP S 1.0*10^18 0.3  
Substrate:InP   S (1-3)*10^18 ~350  

Source:PAM-XIAMEN

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