PAM-XIAMEN has announced his 6” GaAs epi wafer are on mass production for PHEMTs and MHEMTs (Pseudomorphic and metamorphic high-electron mobility transistors) ,HBTs(Heterojunction bipolar transistors), MESFETs (Metal-semiconductor field effect transistors) and other device,grown by molecular beam epitaxy (MBE) systems.
The GaAs-pHEMT is widely used for high [...]
2012-05-11meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
500
P/P
1-100
SEMI Prime, TTV<1μm, With Lasermark
n-type Si:P
[100-4°]
4″
525
P/E/P
1-10
SEMI Prime
n-type Si:P
[100]
4″
600
P/P
1-100
SEMI Prime, TTV<2μm, Bow<20μm, Warp<30μm
n-type Si:P
[100]
4″
1000
P/P
1-20
SEMI Prime
n-type Si:P
[100]
4″
2500
P/P
1-100
SEMI Prime, Individual cst
n-type Si:Sb
[100]
4″
450
P/E
~0.03
SEMI Prime
n-type Si:Sb
[100]
4″
400
P/E
~0.02
SEMI Prime
n-type Si:Sb
[100] ±0.2°
4″
250
P/P
0.01-0.05
SEMI Prime
n-type Si:Sb
[100]
4″
310 ±15
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
600
P/E
0.01-0.03
Strange Flats
n-type Si:Sb
[100-4°]
4″
1500
P/E/P
0.005-0.030
SEMI Prime
n-type Si:Sb
[100]
4″
1500
P/E/P
0.001-0.030
SEMI Prime
n-type Si:P
[111]
4″
1500
P/E
>20
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI [...]
2019-03-06meta-author
PAM-XIAMEN offers crucibles and coating products of PBN material including PBN Crucibles,PBN Plates,PBN Coating,PBN Heaters.
These PBN (Pyrolytic Boron Nitride) products are widely used in such fields as optoelectronic,microelectronics,solar energy and powder sintering.
[...]
2018-11-01meta-author
The global demand for ultra-bright blue and green LEDs has driven the development of LED nitride wafer technologies. Among them, sapphire substrate is currently the most common substrate material in GaN epitaxial growth, and it is also the substrate of epitaxial GaN material with [...]
2022-03-25meta-author
PAM XIAMEN offers 2 inch GaN (Gallium Nitride) HEMT Epitaxial Wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. This GaN epitaxial wafer is for high-electron-mobility transistors (HEMT).
We sell directly from the factory, and therefore can offer the best prices on the market for high [...]
2019-03-11meta-author
PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375um.
3″ Si wafer
Diameter: 76.2 +/- 0,1 mm
Thickness: 375±25μm
Orientation: <111>
Dopant: p-type/Boron
Resistivity<0.005Ωcm
Front side polished
Back side: frosted
SEMI standard
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-07-04meta-author