PAM XIAMEN offers 6″ Silicon EPI Wafers.
Substrate | EPI | Comment | |||||
Size | Type | Res Ωcm |
Surf. | Thick μm |
Type | Res Ωcm |
|
6″Øx675μm | n- Si:P[100] | 0.001-0.002 | P/EOx | 3.2 ±0.2 | n- Si:P | 0.32-0.46 | n+/n++ |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.