PAM XIAMEN offers 60+1mm FZ Si Ingot -2
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-11meta-author
PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates.
Main Parameters
Crystal structure
face centered cubic, M3 a = 6.291 Å
Growth method
crystallization process
Density
1.98(g/cm3)
Melting point
770 °C
Refractive index
1.49025 (at 589 nm)
T
0.91
Nf
0.01114
Surface roughness
<10 nm due to hygroscopic [...]
2019-03-12meta-author
PAM-XIAMEN, one of leading nanofabrication companies, has formed a compatible management system of multi-material, multi-user, multi-device, multi-process after years of exploration. The details as follows:
* Multi-Material
We can process multiple materials: Si, III-V semiconductor, glass, ceramic;
– Can process wafers of 6 inches and below, compatible [...]
2021-11-30meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100-6°]
4″
525
P/E
1-100
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.08-0.12
SEMI Prime, TTV<5μm
p-type Si:B
[100-4°] ±0.5°
4″
381
P/E
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
800
P/EP
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
3100
P/P
CZ 0.006-0.009
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
525
P/E
0.0042-0.0047
SEMI Prime
p-type Si:B
[100]
4″
150 ±15
P/P
0.001-0.005
SEMI Prime, TTV<2μm
p-type Si:B
[111-3°]
4″
300
P/E
3-4
SEMI Prime
p-type Si:B
[111-3°]
4″
400
P/E
0.015-0.018
SEMI Prime
p-type Si:B
[111]
4″
525
P/E
0.005-0.006
SEMI Prime
p-type Si:B
[111-1.5°]
4″
525
P/E
0.002-0.004
SEMI Prime
p-type Si:B
[111]
4″
300
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° [...]
2019-03-06meta-author
LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers
In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure [...]
PAM-XIAMEN offers silicon ingot with FZ Intrinsic undoped, MCC lifetime (Minority Charge Carrier Lifetime) more than 1000Ωcm.
Silicon Ingot, FZ intrinsic undoped, MCC lifetime
An intrinsic(pure) semiconductor, also called an undoped semiconductor or i-type semiconductor,
is a pure semiconductor without any significant dopant species present. The number of [...]
2019-03-15meta-author