Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?
A:5pcs is ok, but the price would be higher.
Related Posts
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium composition? Any In segregation or clusters?
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium [...]
2018-06-19meta-author
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers?
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
2018-06-19meta-author
Regarding LED epi wafer,does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project.
Q: Regarding LED epi wafer,does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A: Sorry, we can not offer fabrication of [...]
2018-06-06meta-author
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves?
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves? A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don’t [...]
2018-06-19meta-author
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD
2018-06-19meta-author
Q: SiC semiconductor wafer reclaim, can you gurantee surface roughness<=0.3nm?
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm? A: Sure, no problem
2018-06-19meta-author