Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InAlAs and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer InAlAs layer [...]
The illustration in (a) shows evanescent waves coupling at two interfaces on the flat planes of a ridge. Figure (b) shows the simulated electromagnetic field intensity of the structure. Image credit: AIST. (PhysOrg.com) — By fabricating ridges coated with silicon dioxide (SiO2) on the surface of a semiconductor, scientists from [...]
Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec) The advantages presented by microLED displays include low power consumption, high resolution, quick response and high luminance. In addition, sensors can be embedded within these displays. But there are [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaP and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer AlGaP layer [...]
Highlights • The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator. • The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device. • The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures. Abstract The metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) have [...]
Phosphorus-containing III-V compounds are the preferred materials for millimeter-wave and submillimeter-wave devices and circuits, optoelectronic devices, and solar cells. InGaP lattice matched to GaAs has a direct band gap of 1.9eV at room temperature, which is a highly efficient light-emitting material. We are pleased to offer InGaP layer to [...]
A 6-inch MicroLink Devices high-efficiency, lightweight and flexible ELO IMM solar cell wafer. Credit: MicroLink Devices The U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) has entered into a license agreement with MicroLink Devices, Inc. (Niles, IL) to commercialize NREL’s patented inverted metamorphic (IMM) multijunction solar cells. While [...]
Side view microphotograph of an electrode slice, depicting the structure of a nanowall/silicon/nanowall. Credit: Victor Krivchenko Members of the D. V. Skobeltsyn Institute of Nuclear Physic and colleagues from the Faculty of Chemistry of the Lomonosov Moscow State University have developed a new silicon- and germanium-based material that could significantly [...]
Abstract The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of LT-GaAs wafer, offers low-temperature grown gallium arsenide on GaAs substrate wafer. Our LT-GaAs epi layer has excellent properties, GaAs films with LT-GaAs layers were grown by molecular beam epitaxy (MBE) method at a low temperature substrate. The grown structures were different with the thickness of [...]
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