Highlights
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The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator.
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The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device.
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The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures.
Abstract
The metal-oxide-semiconductor [...]
2017-10-12meta-author
What are Silicon Wafer Flats?
PAM XIAMEN offers Silicon Wafer Flats
Since Silicon Wafers look basically the same! Flats are cut into the edge of the wafers so users could determine the wafer’s dopant-type and orientation.
Below is an example of silicon wafers flat specs:
Spec.
2”
3”
100mm
125mm
150mm
200mm
300mm
Diameter
2.000+/-.015”
3.000+/-.025”
100+/-.5mm
125+/-.5mm
150+/-.2mm
200+/-.2mm
300+/-.2mm
50.8+/-.38mm
76.2+/-.63mm
Thicknes s
0.011+/-.001”
0.015+/-.001”
525+/-20 um [...]
2019-02-15meta-author
Pure silicon is more like an insulator than a conductor, and when external forces are applied (such as applied voltage), it has no ability to change its conductive state. So other elements must be doped into silicon, and the two most important dopants are boron (B) and [...]
2023-08-10meta-author
LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers
In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure [...]
PAM XIAMEN offers 4″ silicon ignot.
Silicon ingot, per SEMI,
G 100.7±0.3mmØ,
p-type Si:B[100]±2.0°,
Ro=(0.001-0.003)Ohmcm,
Ground Ingot, NO Flats,
NOTE: visual rings of dopant on front and back side ARE NOT allowed
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-07-02meta-author
Due to its excellent electrical, thermal, and radiation resistance, silicon carbide has become a potential material for applications in high-frequency, high-power, and strong radiation environments. MOS capacitors are an important means of studying semiconductor surfaces and interfaces, as well as the basic structure of [...]
2023-03-17meta-author