Silicon Wafer
Si wafer Substrate -Silicon
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
N/A
N/A
N/A
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
(1-200)E16
N/A
N/A
1-100
Si
(100)
25.4
525
N/A
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si with Oxide layer
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
350-500
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
Si
(100)
50.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si with electrodes
(100)
50.8
400
N/A
<0.05
N/p
1E14-1E15
N/A
N/A
1-100
Si
(100)
50.8
275
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
275±25
SSP
1~10
N/p
N/A
N/A
N/A
1-100
Si
(111)
50.8
350±15
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
430±15
SSP
5000-8000
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
410±15
SSP
1~20
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
400-500
SSP
>5000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
525±25
SSP
1~50
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
SSP
1~10
N P
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
P/P
>700
P/
N/A
N/A
N/A
1-100
Si
(100)
76.2
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si
(100)
100
625
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
SSP
N/A
N/P
N/A
N/A
N/A
1-100
Si
(100)
100
320
SSP
>2500ohm·cm
P/b
N/A
N/A
N/A
1-100
Si
(100)
100
N/A
SSP
10~30
N/p
N/A
N/A
N/A
1-100
Si
(100)
100
505±25
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
381
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
625±25
SSP
0.001-0.004
N/A
N/A
N/A
N/A
1-100
Si [...]
SAPPHIRE WAFERS
2 INCH ALUMINUM NITRIDE ALN TEMPLATE ON SAPPHIRE
BARIUM FLUORIDE BAF2 CRYSTAL
BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES
BGO BISMUTH GERMANATE BI4GE3O12 SCINTILLATION CRYSTAL CRYSTALS
GRAPHENE CVD FILMS AND GRAPHENE OXIDE
EU DOPED CALCIUM FLUORIDE EU: CAF2 CRYSTAL
NON-LINEAR CRYSTAL CA4YO(BO3)3 YCOB
CERIUM FLUORIDE CEF3 CRYSTAL
CSI CESIUM IODIDE SCINTILLATION CRYSTAL [...]
2019-03-12meta-author
CZT Semiconductor Wafer
CdZnTe Wafer Substrate-Cadmium Zinc Telluride
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
FWHM
PCS
(mm)
(μm)
Ω·cm
1-100
CdZnTe
N/A
10×10
1000
DSP
>1E10
N
@59.5keV<7%
1-100
CdZnTe
N/A
10×10
2000
DSP
>1E10
N
@59.5keV<7%
1-100
CdZnTe
(111)
10×10
500
SSP
N/A
P
N/A
1-100
CdZnTe
(211)B
10X10
800
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
10X10
500
lapping
N/A
N/A
N/A
1-100
CdZnTe
N/A
10X10
500
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20X20
800
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20×20
5000
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20×20
2000
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20×20
3000
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
3X3
2000
DSP
N/A
N/A
N/A
As a CZT semiconductor wafer supplier,we offer CZT semiconductor wafer list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb
InAs wafer Substrate- Indium Arsenide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
InAs
(110)
40.0
500
SSP
N/A
P
(1-9)E17
N/A
N/A
1-100
InAs
(100)
50.8
450
SSP
N/A
P
1E17/cc
N/A
< 20000
1-100
InAs
(100)
50.8
400
SSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(100)
50.8
400
DSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(111)B
50.8
N/A
SSP
N/A
N/S
(1-3)E18
N/A
N/A
1-100
InAs
(100)
50.8
N/A
SSP
N/A
N/Te
1E16/cc
N/A
N/A
1-100
InAs
(100)
50.8
400
DSP
N/A
P
(1-9)E18/cc
N/A
N/A
1-100
InAs
(100)
3x3x5
N/A
N/A
N/A
N/A
3E16/cc
N/A
N/A
As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team
3)2”InAs
Type/Dopant:N Un-doped
Orientation : <111>A ±0.5°
Thickness:500um±25um
epi-ready
Ra<=0.5nm
Carrier Concentration(cm-3):1E16~3E16
Mobility(cm -2 ):>20000
EPD(cm -2 ):<15000
SSP
5)2”InAs
Type/Dopant:N/P
Orientation :(100),
Carrier Concentration(cm-3):(5-10)E17,
Thickness:500 [...]
Free-standing Gallium Nitride
Item No.
Type
Orientation
Thickness
Grade
Micro Defect Density
Surface
Usable area
N-Type
PAM-FS-GaN50-N
2″ N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN45-N
dia.45mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN40-N
dia.40mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN38-N
dia.38mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN25-N
dia.25.4mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN15-N
14mm*15mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN10-N
10mm*10.5mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN5-N
5mm*5.5mm, N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
SEMI-INSULATING
PAM-FS-GaN50-SI
2″ N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN45-SI
dia.45mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN40-SI
dia.40mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN38-SI
dia.38mm,N [...]
Other Wafers
ZnO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
ZnO
(0001)
10×10
1000
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
1000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(10-10)
10×10
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10X15
300
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
N/A
14X14
1000
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
15X15
300
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
1000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
As cut
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
2000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5×5
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5X5
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5X5
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(11-20)
5X5
500
SSP
N/A
undoped
none
N/A
<0.5
As a ZnO semiconductor wafer supplier, we offer ZnO semiconductor wafer list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
MgO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
MgO
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(111)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(111)
10×10
1000
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
1000
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
As a MgO semiconductor wafer supplier,we offer MgO semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
YSZ Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
YSZ
(100)
25.4
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
200
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
200
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(111)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
20×20
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
30×30
500
SSP
N/A
N/A
N/A
N/A
<0.5
As a YSZ wafer supplier,we offer YSZ wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
STO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
STO
(100)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
STO
(110)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
STO
(111)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
As a STO wafer supplier,we offer STO wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
LSAT Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
LSAT
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(100)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(110)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(111)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(100)
10X10
2000
SSP
N/A
N/A
N/A
N/A
<0.5
As a LSAT wafer supplier,we offer LSAT wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
TiO2 Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime [...]