PAM XIAMEN offers 2″CZ Prime Silicon Wafer-1
tem2, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: [...]
2020-03-25meta-author
III-V group compound GaInP is an efficient luminescent ternary mixed crystal material, which can be grown on InP substrate. PAM-XIAMEN can offer GaInP thin film growth on InP substrate for various applications, like photoluminescent testing. More about the GaInP / InP epi wafer please see [...]
Both PAM1002 and PAM0502 are single channel counting module based on CZT detector.They integrated CZT detectors,which sizes are 10x10x2mm³, 5x5x2mm³ or others, high gain charge sensitive amplifier and SK shaping circuit.
1. Specification of Single Photon Channel Counting Module
Dimension
37×18×5mm3
Weight
5.7g
Energy range
50KeV~1.5MeV
Measurement accuracy
<±10%@137Cs
Dose rate range
0.1uSv/h~1.5mSv/h
Output impedance
50Ω
Operating temperature
-20℃-+40℃
Power
<0.01W
Time [...]
2019-04-23meta-author
High transparency AlN template on sapphire and silicon substrate are available from PAM-XIAMEN, which are suitable for making high-frequency BAW, SAW devices and power electronic. Aluminum nitride (AIN) template not only has the characteristics of AIN piezoelectric film, but also has the characteristics of higher sound propagation rate, [...]
2019-04-26meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
100
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
100
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
100
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
100
N
Phos
CZ
-100
300-350
P/P
PRIME
100
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
100
N
Phos
CZ
-100
350-400
P/P
PRIME
100
N
Phos
CZ
-100
1-3
350-400
P/P
PRIME
100
N
As
CZ
-100
.001-.005
375-425
P/P
PRIME
100
N
Phos
CZ
-100
1-20
375-425
P/E
PRIME
100
N
Phos
CZ
-100
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
450-500
P/P
PRIME
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
PRIME
100
N
Phos
FZ
-100
>3000
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
500-550
P/E
PRIME
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
PRIME
100
N
Phos
FZ
-100
>3000
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-25meta-author