PAM-XIAMEN can offer 850nm and 940nm infrared LED wafer by MOCVD. 850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it [...]
2020-05-14meta-author
PAM XIAMEN offers 3″ Prime EPI Wafer.
Details of Prime 3″ Silicon Wafer Specification
CZ SUBSTRATE:
Orientation : 111
OFF orientation : 3° – 4°
Type/Dopant : n/Sb
Resistivity Ω cm : <0.018
Diameter mm : 76.2 +/- 0.5
Flats : SEMI
Flat, location [...]
2019-07-03meta-author
PAM XIAMEN offers high quality GaSb single crystal wafers.
1. Specifications of GaSb Single Crystal Wafers
GaSb undoped
GaSb Wafer (100), undoped, 10x10x0.5 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished
GaSb Wafer (111)-A, [...]
2019-04-22meta-author
PAM XIAMEN offers Zinc Oxide on Silicon.
The following wafers work
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2 layer on 4″ Silicon wafer
Dry Oxide layer thickness: 100 nm ( 2000A) +/-10%
Growth method – Dry oxidizing at 1000oC
Refractive index – 1.455
Note: customized oxide layer [...]
2019-02-26meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[5,5,12] ±0.5°
3″
380
P/E
1-10
SEMI Prime
p-type Si:B
[211] ±0.5°
3″
525
P/P
>10
SEMI Prime
p-type Si:B
[211] ±0.5°
3″
525
P/E
>10
SEMI Prime
p-type Si:B
[111-28° towards[001]] ±0.5°
3″
400
P/E
>20
SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst
p-type Si:B
[111-4°] ±0.5°
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111-4°] ±0.5°
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111] ±0.5°
3″
508
E/E
0.792-1.008
SEMI TES, TTV<2μm, Epak cst
p-type Si:B
[111-4°] [...]
2019-03-06meta-author
When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the [...]