Germanium was an early transistor material. Now its charge-carrying abilities and advanced fabrication technology make it an attractive material for future chips. As a proof of concept, our team used germanium-on-insulator wafers to construct inverters containing first planar transistors and then FinFETs
Germanium was first [...]
2019-08-28meta-author
Highlights
•AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation.
•The depletion region of structure is amended using a multiple recessed gate.
•A gate structure is proposed to be able to control the thickness of the channel.
•RF parameters are considered and are improved.
In this [...]
PAM XIAMEN offers 3″LiNbO3 single crystal thin film
LiNbO3 single crystal thin film (X,Y,Z), X-cut 10μm; Substrate: 3″ Si 0.5 0.4mm;(PAM-P20412-LNOI )
Structure:Top layer: LiNbO3 single crystal thin film X-cut 10 μm
Substrate: 3″ Si 0.4mm, Resistivity >10,000Ωcm
Surface Roughness<0.5nm
TTV (Thickness Uniformity) <1.2μm, 17 [...]
2020-03-24meta-author
2″ Free Standing Gallium Nitride (GaN) Substrate
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)
2012-03-06meta-author
Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling
On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]
2018-04-19meta-author
PAM XIAMEN offers 4″ Silicon Wafer-19 as follows, while silicon wafer list includes, but not limited to the following.
Silicon wafers, P/E 4″Ø×400±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm,
One-side-polished, back-side etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000µs.
For more polished wafer specification, please [...]
2019-11-26meta-author