PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
4″
1000
P/E
1-10
SEMI Prime
n-type Si:Sb
[111-4°]
4″
450
P/E
0.025-0.045
SEMI Prime
n-type Si:Sb
[111-2.5°]
4″
625
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[111]
4″
525
P/E
0.016-0.020
SEMI Prime
n-type Si:Sb
[111-4°]
4″
525
P/E
0.010-0.020
SEMI Prime
n-type Si:Sb
[111-2°]
4″
380
P/E
0.008-0.018
SEMI Prime
n-type Si:Sb
[111-3°]
4″
400
P/E
0.008-0.018
SEMI Prime
n-type Si:Sb
[111-3°]
4″
400
P/E
0.005-0.018
SEMI Prime
n-type Si:As
[111-3°]
4″
400
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-3°]
4″
400
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-2.5°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-3°]
4″
525
P/E
0.001-0.005
SEMI Prime
Intrinsic Si:-
[100]
4″
525
P/E
400-1,000
SEMI Prime
For more information, please visit our website: https://www.powerwaywafer.com,
send us [...]
2019-03-06meta-author
PAM XIAMEN offers 2 inch AlN on sapphire wafer grown by MOCVD, which is the major technology for growing single-crystal aluminum nitride onto large-size, low-cost, and mature sapphire substrate. One important utilization of high-quality AlN-on-sapphire template is the deep ultraviolet (DUV) optoelectronic devices.
1. Specification of [...]
2019-03-11meta-author
Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique
There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality SiC wafers for SiC power devices. We have examined whether [...]
PAM XIAMEN offers LD Bare Bar for 880nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 880nm
Filling Factor: 30%
Output Power: 80W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
This standard specifies the test method for the dislocation density of germanium single crystal. This standard method is applicable to the measurement of dislocation density of monocrystal germanium on {111), {100} and {113} planes. The test range is 0cm-2~100000cm-2.
1. Normative Document Citation for Determining [...]
2021-11-02meta-author
Safety Data Sheet of Indium Phosphide Wafer
Product Name:
Indium Phosphide
Date of Issue:
SDS No.:
PAM-001
2017/10/15
1.PRODUCT AND COMPANY IDENTIFICATION
Product Name: Indium Phosphide
Chemical Formula: InP Mol. Wt. 145.79
Manufacturer: Powerway Wafer Co.,Limited
Address:#506B, Henghui Business Center,No.77,Lingxia Nan Road
High Technology Zone, Huli, Xiamen,361000
2.HAZARD IDENTIFICATION
Toxic by inhalation and if swallowed.Gives rise to hazardous [...]
2020-08-04meta-author