Single crystal 3C-SiC substrate can be supplied with specifications as: https://www.powerwaywafer.com/3c-sic-wafer.html.
Silicon carbide (SiC) has excellent properties such as wide bandgap, high breakdown field strength, high saturation electron drift rate, and high thermal conductivity, and has important applications in fields such as new energy vehicles, photovoltaics, [...]
2024-04-26meta-author
PAM XIAMEN offers 2″ FZ Si wafer with SSP
2″ Undoped Silicon Wafer
Diameter: 50.8mm
Thickness: 300um
Polished : Single Side Polished
Orientation: <100>
Resistivity >10,000Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-15meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[111-4°] ±0.5°
4″
325
P/E
0.001-0.005
SEMI Prime, Back Surface: Sand blasted with LTO seal
n-type Si:As
[111-4°] ±0.5°
4″
300
P/E
0.001-0.005
SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers
n-type Si:As
[111-2°] ±0.5°
4″
400
P/EOx
0.001-0.004 {0.0018-0.0036}
SEMI Prime, Epi edges, 0.5μm LTO
n-type Si:As
[111-4°] ±0.5°
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111] ±0.5°
4″
1000
P/E
0.001-0.005 {0.0031-0.0040}
SEMI Prime, TTV<4μm, [...]
2019-03-05meta-author
PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates.
Main Parameters
Growth Method
orthogonal
Unit cell constant
a=5.43、b=5.50、c=7.71
Melt point(℃)
1600℃
Density
7.57g/cm3
Dielectric constants
25
Growth method
hanging maneuver method
Size
10×3, 10×5, 10×10, [...]
2019-03-14meta-author
PAM XIAMEN offers 3″ Prime EPI Wafer.
Details of Prime 3″ Silicon Wafer Specification
CZ SUBSTRATE:
Orientation : 111
OFF orientation : 3° – 4°
Type/Dopant : n/Sb
Resistivity Ω cm : <0.018
Diameter mm : 76.2 +/- 0.5
Flats : SEMI
Flat, location [...]
2019-07-03meta-author
A process model of wafer thinning by diamond grinding
This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding [...]