Single Crystal
CeO2 Crystal
Fe3O4 Crystal
SnO2 Crystal
Cu2O Crystal
Fe2O3 Crystal
MnO Crystal
PrScO3 Crystal Substrate
NdScO3 Crystal Substrate
NdScO3 Crystal Substrate
GdScO3 Crystal Substrate
DyScO3 Crystal Substrate
SOI Wafer
Ti Terminal SrTiO3
HOPG(highly oriented pyrolytic graphite)
ZnO/cAl2O3 Film
AIN on Sapphire Wafer
2018-07-10meta-author
Glass Wafer, Including Bf33, Quartz, Ito Glass, Alkali free glass substrate
In Stock, But Not Limited To The Following.
Wafer No.
Size
Polish
Orientation
Thickness(um)
Quantity(Pcs)
PAM-XIAMEN-WAFER-#B1
4″BF33 Glass
DSP
—
500um
27
PAM-XIAMEN-WAFER-#B2
4″BF33 Glass
DSP
—
1000um
8
PAM-XIAMEN-WAFER-#B3
4″ Sapphire
—
—
500um
25
PAM-XIAMEN-WAFER-#B4
6″BF33 Glass
DSP
—
500um
15
PAM-XIAMEN-WAFER-#B5
Glass 90*90
DSP
—
700um
3
PAM-XIAMEN-WAFER-#B6
ITOConductive Glass
20*20
—
1.1mm
15
PAM-XIAMEN-WAFER-#B7
2″Quartz
DSP
—
1.2mm
50
PAM-XIAMEN-WAFER-#B8
4″ Sapphire
SSP
C
650um
16
PAM-XIAMEN-WAFER-#B9
4″ Sapphire
SSP
C
650±30um
75
PAM-XIAMEN-WAFER-#B10
2″ Sapphire
SSP
R
430um
25
PAM-XIAMEN-WAFER-#B11
8″Glass
DSP
—
700um
109
PAM-XIAMEN-WAFER-#B12
6″Sapphire
SSP
—
600um
31
PAM-XIAMEN-WAFER-#B13
4″BF33 Glass
DSP
—
1mm
35
PAM-XIAMEN-WAFER-#B14
2″ Sapphire
DSP
—
100um
12
PAM-XIAMEN-WAFER-#B15
4″BF33 Glass
DSP
—
200um
18
PAM-XIAMEN-WAFER-#B16
4″ Sapphire
DSP
—
500um
20
PAM-XIAMEN-WAFER-#B17
4″Quartz
DSP
—
1mm
8
PAM-XIAMEN-WAFER-#B18
2″Quartz
DSP
—
1mm
10
PAM-XIAMEN-WAFER-#B19
2″ Sapphire
DSP
—
1mm
74
PAM-XIAMEN-WAFER-#B20
2″ Sapphire
SSP
M
430±15um
50
PAM-XIAMEN-WAFER-#B21
2″ Sapphire
SSP
C
430um
850
PAM-XIAMEN-WAFER-#B22
2″ Sapphire
DSP
—
300um
425
PAM-XIAMEN-WAFER-#B23
6″BF33 Glass
DSP
—
675um
17
Moreover, we can supply Alkali free glass substrate, [...]
2019-11-27meta-author
The wafer of graphene for sale from PAM-XIAMEN are Monolayer Graphene on PET film, Monolayer Graphene on SiO2/Silicon, Bilayer Graphene on SiO2/Silicon, Monolayer Graphene on Copper, and graphene wafer growth on nickel for researches and industry.
Graphene is a new semiconductor material with a single-layer two-dimensional honeycomb lattice structure piled up by carbon [...]
CZT Semiconductor Wafer
CdZnTe Wafer Substrate-Cadmium Zinc Telluride
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
FWHM
PCS
(mm)
(μm)
Ω·cm
1-100
CdZnTe
N/A
10×10
1000
DSP
>1E10
N
@59.5keV<7%
1-100
CdZnTe
N/A
10×10
2000
DSP
>1E10
N
@59.5keV<7%
1-100
CdZnTe
(111)
10×10
500
SSP
N/A
P
N/A
1-100
CdZnTe
(211)B
10X10
800
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
10X10
500
lapping
N/A
N/A
N/A
1-100
CdZnTe
N/A
10X10
500
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20X20
800
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20×20
5000
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20×20
2000
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
20×20
3000
DSP
N/A
N/A
N/A
1-100
CdZnTe
N/A
3X3
2000
DSP
N/A
N/A
N/A
As a CZT semiconductor wafer supplier,we offer CZT semiconductor wafer list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb
InAs wafer Substrate- Indium Arsenide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
InAs
(110)
40.0
500
SSP
N/A
P
(1-9)E17
N/A
N/A
1-100
InAs
(100)
50.8
450
SSP
N/A
P
1E17/cc
N/A
< 20000
1-100
InAs
(100)
50.8
400
SSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(100)
50.8
400
DSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(111)B
50.8
N/A
SSP
N/A
N/S
(1-3)E18
N/A
N/A
1-100
InAs
(100)
50.8
N/A
SSP
N/A
N/Te
1E16/cc
N/A
N/A
1-100
InAs
(100)
50.8
400
DSP
N/A
P
(1-9)E18/cc
N/A
N/A
1-100
InAs
(100)
3x3x5
N/A
N/A
N/A
N/A
3E16/cc
N/A
N/A
As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team
3)2”InAs
Type/Dopant:N Un-doped
Orientation : <111>A ±0.5°
Thickness:500um±25um
epi-ready
Ra<=0.5nm
Carrier Concentration(cm-3):1E16~3E16
Mobility(cm -2 ):>20000
EPD(cm -2 ):<15000
SSP
5)2”InAs
Type/Dopant:N/P
Orientation :(100),
Carrier Concentration(cm-3):(5-10)E17,
Thickness:500 [...]
PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP
GaSb Wafer Substrate – Gallium Antimonide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
GaSb
(100)±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)A±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Te
(5-8)E17
N/A
N/A
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
P/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/Te
(1-8)E17/(2-7)E16
N/A
< 1000
1-100
GaSb
(100)
50.8
450±25
SSP
N/A
N/A
(1-1.2)E17
N/A
N/A
1-100
GaSb
(100)
50.8
350±25
SSP
N/A
N/A
N/A
N/A
N/A
1-100
GaSb
(100)
76.8
500-600
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)
100
800±25
DSP
N/A
P/Zn
N/A
N/A
N/A
1-100
GaSb
(100)
100
250±25
N/A
N/A
P/ZnO
N/A
N/A
N/A
As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team
1)2″,3″GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
Growth [...]