PAM XIAMEN offers Si+SiO2 +Ti( or TiO2)+Pt Thin film.
Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal
SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate ,10x10x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
SiO2+Ti+Pt(111) thin [...]
2019-05-16meta-author
Product Specifications
PAM XIAMEN offers Freestanding GaN Substrate
2″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
2″(50.8)+/-1mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
16+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
8+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation Density
<5×10^6cm-2
Marco Defect Density
A grade<=2cm-2 B grade>2cm-2
TTV
<=15um
BOW
<=20um
Surface Finish
Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
≥ 90 %
Usable Area
1.5″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
1.5″(38.1)+/-0.5mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
12+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
6+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation [...]
2019-03-15meta-author
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
c doped
c [...]
2020-05-26meta-author
PAM XIAMEN offers GGG single crystal.
Composition
GGG
YSGG
S-GGG(CaMgZr:GGG)
NGG
GYSGG
GSGG
Lattice constant
12.376 Å
12.426 Å
12.480 Å
12.505Å
12.507 Å
12.554 Å
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 oC
~1730 oC
~1730 oC
GGG, (111), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 2sp
GGG, (110), 5x5x0.5mm, 1sp
GGG (111), 10x10x0.5mm, 2sp
GGG, (111), 10x10x0.5mm, 1sp
GGG, [...]
2019-04-26meta-author
PAM XIAMEN offers 3″ Silicon Wafer-21
Si wafer
Orientation: (111) ± 0.5°
Type: p-type
Dopant: B
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.002 Ohm*cm
Single side polished
C Boron > E20 atom/cm3
Oi < 1E18 atom/cm3
[...]
2020-03-18meta-author
PAM XIAMEN offers CZT and MCT crystal.
CZT and MCT crystal are new semiconductors which enables effective conversion of radiation to electron. The technology will reform radiography and radiation measurement in medical and industrial areas. We both provides the standard substrate , CZT and [...]
2019-04-19meta-author