Monitoring defects in III–V materials: A nanoscale CAFM study
Highlights •Nanoscale defects in III–V materials, grown over Si were characterized with CAFM. •The defects exhibit higher conductivity. •The contact rectifying feature is hide by a larger current under the reverse bias. •Patterned samples fabricated using Aspect Ratio Trapping were also characterized. Abstract The implementation of high mobility devices requires growing III–V materials on silicon substrates....