PAM XIAMEN offers Silver(Ag) on Si wafer .
Silver Film on Silicom Wafer ,Ag: 0.2 microns / ,Si(100) P-type R:1-20 ohm.cm
Silver Metallic Film
Film Deposition by DC Sputtering
Silver Thickness: 0.2 microns
Film Resistivity: N/A
Film Crystallinity: N/A
Roughness, RMS: 4.87 nm and < [...]
2019-04-29meta-author
In contrast to indirect semiconductor detectors, CZT provides ‘direct’ solid-state technology. The CZT semiconductor is a pixilated array with an effective Z of 50 and a density of 5.8 g/cm3. Gamma rays enter the CZT semiconductor detector and are directly converted to electron hole [...]
2019-03-11meta-author
PAM XIAMEN offers 1″Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orien
Res (Ohm-cm)
Thick (um)
Polish
Description
PAM2266
25.4mm
P
B
<111>
>1000
20000um
DSP
FZ
PAM2267
25.4mm
P
B
<100>
ANY
400um
SSP
Thickness is: 400+/-100um.
PAM2268
25.4mm
ANY
<100>
500um
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM2269
25.4mm
Undoped
Undoped
<111>
>2000
280um
SSP
Intrinsic FZ
PAM2270
25.4mm
Undoped
Undoped
<100>
>5000
73.5um
DSP
FZ, Float Zone
PAM2271
25.4mm
P
B
<100>
.01-.05
500um
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2271
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, 1Flat, Soft cst
PAM2272
Intrinsic Si:-
[111]
1″
280um
P/E
FZ [...]
2019-02-19meta-author
PAM XIAMEN offers 2.5″ PBN Heater
2.5″ PBN Heater.
1. Resistance: 22-35 ohm
2. Voltage: 180 V
3. Current: 15 A
4. Power: 2000 W
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-12-30meta-author
PAM XIAMEN offers LaAlO3 single crystal.
LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well [...]
2019-05-07meta-author
LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers
In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure [...]