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What is GaAs?

What is GaAs?   GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs).   GaAs Basic Parameters at 300K Crystal structure Zinc Blende Group of symmetry Td2-F43m Number of atoms in 1 [...]

PAM-XIAMEN has announced 6″GaAs epi wafer on mass production

PAM-XIAMEN  has announced his 6” GaAs epi wafer are on mass production for PHEMTs and MHEMTs (Pseudomorphic and metamorphic high-electron mobility transistors) ,HBTs(Heterojunction bipolar transistors), MESFETs (Metal-semiconductor field effect transistors) and other device,grown by molecular beam epitaxy (MBE) systems. The GaAs-pHEMT is widely used for high frequency switching devices in wireless systems like [...]

Osram Laboratory Reports 142 lm/W Efficiency Record for Warm

Osram Laboratory Reports 142 lm/W Efficiency Record for Warm White LED Light Source March 15, 2011…Osram Opto Semiconductors reports that it has set a new laboratory record of 142 lm/W for the efficiency of a warm white LED light source. The LED with a correlated color temperature (CCT) of 2755 [...]

2″ Free Standing Gallium Nitride (GaN) Substrate

2″ Free Standing Gallium Nitride (GaN) Substrate   PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)

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20 years and counting for the GaN LED

A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)