3″ Prime EPI Wafer

3″ Prime EPI Wafer

PAM XIAMEN offers 3″ Prime EPI Wafer.

Details of Prime 3″ Silicon Wafer Specification
CZ SUBSTRATE:
Orientation : 111
OFF orientation : 3° – 4°
Type/Dopant : n/Sb
Resistivity Ω cm : <0.018
Diameter mm : 76.2 +/- 0.5
Flats : SEMI
Flat, location : 110 +/- 2 degree
Flat, Primary mm : 22.22 +/- 3.17
Flat, location : 45 +/- 5 degree CW from Primary
Flat, Secondary mm : 11.18 +/- 1.52
Thickness µm : 381 +/- 25
BOW µm : < 40
WARP µm : < 40
TTV µm : < 10
Edges : SEMI rounded
Finish : Single Side Polished
Backside : Lapped & Etched
Backside seal : Mass Transferred Polysilicon
Back Poly thickness µm : ~ 2
EPI LAYER:
Type/Dopant : n/Ph
Resistivity Ω cm : 7.5 – 10
Thickness µm : 20 – 25
Others : SEMI
Packing Method : epak

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

2019-07-03

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