Quartz substrate is an ideal substrate for depositing amorphous silicon (a-Si) and its hydrogenated derivatives (a-Si: H) due to its excellent light transmittance, high temperature stability, and good compatibility with silicon-based thin film preparation processes. Amorphous silicon thin films play a crucial role in thin-film transistors, peripheral circuits of liquid...
PAM-XIAMEN can make InP epitaxial wafers for fabricating optical chips used in artificial intelligence (AI). More specifications please view the pages below, or contact our sales team at [email protected] Epitaxial Wafers Diameter Wavelength Range Applications DFB Epitaxial Wafer 2, 3, 4 inch 1270 – 1654nm(Covering O, C, and L bands) Optical communication (transmitter optical sub-assembly), LiDAR, gas sensing EML...
Indium phosphide (InP), as an important III-V compound semiconductor, holds an irreplaceable position in fiber-optic communications, 5G/6G radio-frequency front-ends, and high-speed integrated circuits due to its high electron mobility, direct bandgap, and excellent high-frequency characteristics. PAM-XIAMEN can grow twins-free InP substrate, for more wafer specifications please contact at [email protected]. Currently, InP...
With the growing demand for low-power, high-efficiency power semiconductor devices in fields such as new energy vehicles and rail transportation, power devices like insulated gate bipolar transistors (IGBTs) have attracted widespread attention. The formation of oxygen precipitates must be avoided in IGBT manufacturing; therefore, float-zone (FZ) silicon wafers with extremely...
PAM-XIAMEN can grow AlN on sapphire templates for R&D applications. For additional technical parameters, please contact at [email protected] As an ultra-wide bandgap semiconductor (bandgap ~6.2eV), AlN plays an irreplaceable role in optoelectronic devices such as deep ultraviolet light-emitting diodes (DUV LEDs). However, the large lattice mismatch of up to 11.7% between...
PAM-XIAMEN can grow high uniformity 4H-SiC epitaxial wafers for R&D applications. For more specifications, please refer to https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html. In recent years, with breakthroughs in the growth technology of large-diameter, high-quality SiC ingots, the substrate size of 4H-SiC has transitioned from 150mm to 200mm, which helps reduce device manufacturing costs and increase...
PAM-XIAMEN can produce planar silicon-based aluminum nitride (AlN) template wafers. For further details, please contact: [email protected] AlGaN-based deep-ultraviolet LEDs hold significant application prospects in fields such as air purification, disinfection, and biomedicine. Silicon substrates have become an ideal alternative to sapphire due to their low cost, large size, and the ability to...
PAM-XIAMEN can offer AlN templates, which are grown on sapphire substrates or silicon substrates. For more specs parameters, please contact our sales team at [email protected] AlN possesses a wide bandgap (6.1eV), high critical electric field, and good thermal conductivity, making it important for deep-ultraviolet light-emitting devices and high-power electronic devices. However,...
Photoelectrochemical water splitting offers a sustainable route to produce hydrogen using solar energy. Among various semiconductor photoelectrodes, silicon is attractive because of its narrow bandgap (1.12 eV), which enables broad absorption of the solar spectrum (300–1200nm), as well as its low cost and well‑established processing technology. The role of a Si electrode...
PAM-XIAMEN supplies 3C-SiC wafers for research purposes. For details, please contact: [email protected] Cubic silicon carbide (3C-SiC) exhibits great potential in cutting-edge fields such as microelectromechanical systems, quantum computing, and optoelectronic devices, owing to its wide bandgap, high thermal conductivity, high critical breakdown field strength, and excellent chemical inertness. However, the ultra-high...