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850nm and 940nm infrared LED wafer

850nm and 940nm infrared LED wafer We can offer 850nm and 940nm infrared LED epiwafer by MOCVD.850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it [...]

Ultra Thin GaAs Wafer

Ultra Thin GaAs Wafer PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished. PAM190709-GAAS with n type and undoped as follows:   N type Ultra Thin GaAs Wafer   Item Parameter Spec Sample Data Unit  1 Growth method VGF VGF —  2 Diameter 50.6土0.2 50.6士0.2 mm 3 Type-Dopant N/Si N/SI — 4 Resistivity (0.8-9.0)E-3 (1.78-5.69)E-3 Ohm.cm 5 Mobility 21500 1592-2327 cm’/v.s  6 Carrier Concentration (O.4-4.0)E18 (O.47-4.00)E18. /cm3 7 EPD ≦S5000 ≦65000 /cm’ 8 Crystal orientation (100)29+/-0.50off 《100).29+/-0.59off degree toward-<111>A0≈0° toward<1112Aa=o。 9 Primary flat Orientation E(0-1-1)+/-0.50 E(0-1-1)+0.50 degree Length 17+/-1.0 17+/-1.0 mm 10 Secondary flat Orientation E(0-11)0.5° ED(O-11)+0.5° degree Length 7+/-1.0 7+/-1.0 mm 11 Thickness 110+/-15 110+/-15 um 12 Front Side Surface Polished Polished — 13 Back Side Surface Polished Polished — 14 TV N/A N/A um 15 Bow N/A N/A um 16 warp N/A N/A um   Ultra Thin GaAs Wafer                             Undoped Ultra Thin GaAs Wafer   Item Parameter Spec Sample Data Unit  1 Growth method VGF VGF —  2 Diameter 50.6土0.2 50.6士0.2 mm 3 Type-Dopant N/Si N/SI — 4 Resistivity >=1E7 >=1E7 Ohm.cm 5 Mobility >3000 >3000 cm’/v.s  6 Carrier [...]

1″ FZ Silicon Ingot with Diameter 25mm

PAM XIAMEN offers 1″ FZ Silicon Ingot with Diameter 25mm Silicon ingot, per SEMI, G Ø25mm FZ n-type Si:P[100]±2.0°, Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

4″ Silicon Oxide Wafer

PAM XIAMEN offers 4″ Silicon Oxide Wafer 4″ Silicon Oxide Wafer Diameter (mm): 100mm Grade: Prime Growth: CZ Type/Dopant: any Orientation: 100 Resistivity (Ohm-cm): any Thickness (µm): 500±25μm Tolerance (µm): any Surface Finish: SSP Flats: SEMI-Std. TTV < (µm): any Bow < (µm): any Warp < (µm): any Particles < (µm): any Laser [...]

3″ Silicon Oxide Wafer

PAM XIAMEN offers 3″ Silicon Oxide Wafer 3″ Silicon Oxide Wafer Diameter (mm): 76mm Grade: Prime Growth: CZ Type/Dopant: any Orientation: 100 Resistivity (Ohm-cm): any Thickness (µm): 500±25μm Tolerance (µm): any Surface Finish: SSP Flats: SEMI-Std. TTV < (µm): any Bow < (µm): any Warp < (µm): any Particles < (µm): any Laser Mark [...]

2″ Silicon Oxide Wafer

PAM XIAMEN offers 2″ Silicon Oxide Wafer 2″ Silicon Oxide Wafer Diameter (mm): 50mm Grade: Prime Growth: CZ Type/Dopant: any Orientation: 100 Resistivity (Ohm-cm): any Thickness (µm): 500±25μm Tolerance (µm): any Surface Finish: SSP Flats: SEMI-Std. TTV < (µm): any Bow < (µm): any Warp < (µm): any Particles < (µm): [...]

4″CZ Prime Silicon Wafer-13

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-13 4″ CZ wafer, P type Orientation: (100)±0.5 Type/Dopant; P/Boron Resistivity: 1-5 Ω-cm Thickness: 525 ± 25 μm Surface: P/E Source: Prolog SEMI Prime, 1Flat, hard cst Diameter: 100 mm For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

VCSEL Laser Wafer Chip

VCSEL Laser Wafer Chip PAM-XIAMEN offer 850 nm,850nm and 940nm VCSEL(vertical-cavity surface-emitting laser) epitaxial wafer for the tele communication, gesture recognition,3D imaging and other applications, which is grown by MOCVD by with GaAs/AlGaAs multiple quantum wells (MQWs) as the active layer. We have three items: VCSEL epitaxial wafer(3”,4”), VCSEL Uncleaved wafer [...]

4″CZ Prime Silicon Wafer-12

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-12 4″ CZ wafer, N type Orientation: (100)±0.5 Type/Dopant: n/phosphorus Resistivity: 1-5 Ω-cm Diameter: 100 mm Thickness: 525 ± 25 μm Surface: P/E Source: Prolog SEMI Prime, 1Flat, hard cst For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

6″FZ Prime Silicon Wafer-3

PAM XIAMEN offers 6″FZ Prime Silicon Wafer-3 6″ FZ Si wafer, 75pcs Orientation: (100)±0.5 Type/Dopant: n/phosphorus Resistivity: 1-5 Ω-cm Life time : > 1000 μs Thickness: 400 ± 25 μm Carbon (atm/cm3): <2.0 x 1016 Oxygen (atm/cm3): < 2 x 1016 Diameter: 150 mm Primary flat: Semi Std Secondary flat: not essential Front and back side Finish: As cut TTV ™: ≤ 12 Bow(tm): [...]