PAM XIAMEN offers Large Size Photomask.
Chromium plate accuracy (Standard Size:430mmx430mm)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
5μm/5μm
10μm/10μm
20μm/20μm
CD Control
±0.15μm(QZ)
±0.5μm
±1.0μm
±2.0μm
Total Pitch Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±2.0μm
Registration Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Overlay Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Orthogonality
±0.75μrad
±2.0μrad
±3.0μrad
±4.0μrad
Chrome plate material (Photomask blank plate)
Material
SodaLimeGlass、Quartz
Max. Size
850mm*1400mm
Normal Size
420mmx520mm,520mm*610mm,520mm*800mm,700mm*800mm,
800mm*920mm,800mm*960mm,850mm*1200mm,850mm*1400mm
Thickness
2.3±0.2mm,3.0±0.2mm,4.8±0.2mm,7.8±0.2mm,
5.0±0.2mm(QZ),8.0±0.2mm(QZ),10.0±0.2mm(QZ)
Film Type
LowReflectanceChrome
Optical Density
(λ=450nm)
BetweenPlates3.0±0.3InPlate±0.3
Reflectivity
(λ=436nm)
BetweenPlates10±5%InPlate±2%
Main application areas:
1、LCD, TFT, CF, TouchPanel, OLED, PDP and other flat panel display industries
2、HDI, [...]
2019-07-04meta-author
MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
280
P/E/P
1-20
SEMI Prime
p-type Si:B
[111-1.5°]
2″
400
P/E
1-10
SEMI Prime
p-type Si:B
[111]
2″
500
P/E
1-10
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
280
P/E
0.5-0.6
SEMI Prime
p-type Si:B
[111-3°]
2″
300
P/P
0.016-0.018
SEMI Prime
p-type Si:B
[111-3.5°]
2″
280
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[111]
2″
600
P/E
0.01-0.05
SEMI Prime
p-type Si:B
[111-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110]
2″
1000
P/P
~4
NO Flats
n-type Si:P
[110]
2″
950
P/P
2.5-3.5
1 F @ <1,-1,0>
n-type Si:P
[110]
2″
450
P/P
~0.6
1 F @ <001>
n-type Si:P
[110]
2″
1000
P/P
0.5-1.0
PF<111> SF 109.5°
n-type Si:P
[100]
2″
500
P/P
800-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
>50
SEMI Prime,
n-type Si:P
[100]
2″
5000
P/E
42-53
SEMI Prime, , Individual cst
n-type [...]
2019-03-07meta-author
Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm−3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT [...]
2019-11-07meta-author
Low Stress Nitride Silicon Wafers
PAM XIAMEN offers Low Stress Nitride Silicon Wafers.
Why use low stress nitride on your silicon wafers? Some uses include surface micromachining process that can fabricate the micromechanical structures when internal tensile stress and native nonporous morphology is required.
SPECIFICATIONS
Thickness range: 50Å [...]
2019-02-11meta-author
There are three basic types of semiconductor materials: intrinsic semiconductors, extrinsic semiconductors, also known as impurity semiconductors. Both types of semiconductor materials can be supplied by PAM-XIAMEN.
1. What Is Intrinsic Semiconductor?
Intrinsic semiconductor refers to a pure semiconductor that is completely free of impurities and [...]
2022-06-20meta-author