You can buy single crystal AlN substrate with higher photoelectric conversion efficiency than indirect band gap semiconductors from PAM-XIAMEN. Aluminum nitride (AlN) is an important blue and ultraviolet light-emitting material, which is used in ultraviolet/deep ultraviolet light-emitting diodes, ultraviolet laser diodes, and ultraviolet detectors. [...]
2019-04-16meta-author
Highlights
•The thickness of graphene grown on SiC was determined by AES depth profiling.
•The AES depth profiling verified the presence of buffer layer on SiC.
•The presence of unsaturated Si bonds in the buffer layer has been shown.
•Using multipoint analysis thickness distribution of the graphene on [...]
Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm−3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT [...]
2019-11-07meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
50.8
P
Boron
FZ
-100
>1000
200-500
P/P
PRIME
50.8
P
Boron
FZ
-100
>3000
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
.005-.02
250-300
P/E
PRIME
50.8
P
Boron
FZ
-100
>3000
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/OX
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/WTOx
50.8
P
Boron
CZ
-100
.001-.005
275-325
P/E
PRIME
50.8
P
Boron
CZ
-100
450-500
P/P
PRIME
50.8
P
Boron
FZ
-100
4000-10000
475-525
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
950-1000
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
50.8
P
Boron
CZ
-111
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-111
1-20
250-300
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-02-27meta-author
Carbon neutrality refers to through afforestation, energy saving and emission reduction, etc., to offset the carbon dioxide or greenhouse gas emissions generated by itself, to achieve positive and negative offset, to achieve relatively “zero emissions”. Only by reducing energy consumption can carbon emissions be [...]
2022-06-02meta-author
PAM XIAMEN offers Middium and Small Size Photomask.
Chromium Plate Accuracy (Standard Size:6inch Quartz)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
3μm/3μm
5μm/5μm
10μm/10μm
CD Control
±0.1μm
±0.3μm
±0.5μm
±1.0μm
Total Pitch Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Registration Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Overlay Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Orthogonality
±0.5μrad
±0.75μrad
±1.0μrad
±2.0μrad
Chrome Plate Material (Photomask Blank Plate)
Material
Soda Lime Glass、Quartz
Max. Size
3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″
Normal Size
1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm
Thickness
6.35±0.2mm (QZ)
Film Type
Low Reflectance Chrome
Optical Density(λ=450nm)
Between Plates3.0±0.3 In Plate±0.3
Reflectivity(λ=436nm)
Between Plates10±5% In Plate±2%
Main application areas:
1. IC Bumping, [...]
2019-07-04meta-author