Photoluminescence and Raman studies of GaN films grown by MOCVD
The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power [...]
2013-04-01meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN‘s product line.
Dr. Shaka, [...]
2018-02-13meta-author
PAM XIAMEN offers ITO/ZnO coated Sodalime Glass.
ITO/ZnO Coated Glass Substrate 1″ x 1″ x 0.7 mm, ITO Film=100nm, ZnO film=50nm
ITO/ZnO Coated Sodalime Glass ITO film=100nm,ZnO film=50nm
Dimension: 1″ x 1″ x 0.7 mm
Resistivity: N/A
ITO film=100nm,ZnO film=50nm
For more information, please visit our website: [...]
2019-04-28meta-author
PAM-XIAMEN can provide a series products of terahertz chip: Power Amplifier (PA) Chip, Low Noise Amplifier (LNA) Chip, PIN/FET Switch, Zero Bias Detector Chip, Amplification Frequency Multiplication Chain (AMC) Chip, MIXER Chip, Schottky Frequency Multiplication MMIC, Schottky Mixing MMIC, and Attenuator Chip. The terahertz chip is a brand-new microchip, a [...]
2021-07-16meta-author
Figure 1: Cross-sectional diagram of the GaN-HEMT device
Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.
This can be used in a high-capacity wireless network with coverage over a radius of several [...]
2017-12-04meta-author
N-type or P-type 125mm silicon wafer can be supplied with the orientation of <111> or <100>. More specs are shown as following:
1. 125mm Silicon Substrate Wafer List
No. 1
ID
Dia
Type
Dopant
Ori
Res
(Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM2683
125mm
N
As
<111>
<0.0035
375um
SSP
MECH
Mechanical Grade. EPI Layer: N/Phos Res: 4.59-5.874ohm.cm 12-16um
PAM2684
125mm
N
P
<100>
<0.001
3000um
SSP
Test
3mm thick
PAM2685
125mm
P
B
<111>
43485
525-575um
SSP
Test
Sold As-Is
PAM2686
125mm
P
B
<111>
43485
500-550um
SSP
Test
Sold As-Is
No. 2
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
(Ωcm)
Comment
PAM2687
p-type Si:B
[100]
5″
889 [...]
2019-02-20meta-author