PAM XIAMEN offers high-quality Al2O3 (Sapphire).
Al2O3(10-14)
Al2O3- Sapphire Wafer, (10-14), 10x10x0.5mm, 1 SP
Fearures:
Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
Wafer size: 10 [...]
2019-04-16meta-author
Properties of InGaN blue laser diodes grown on bulk GaN substrates
High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, [...]
Sales of semiconductors: present and next future of the global market
“Softening demand and lingering macroeconomic challenges continued to limit global semiconductor sales in November. Despite these headwinds, the industry may narrowly surpass total annual sales from 2014 and is projected to post modest sales [...]
2016-07-12meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, Lifetime>1,000μs, Back-side Fine Ground
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs,settes of 6 and 8 wafers
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI TEST (Scratches, Lifetime>1,600μs
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 7,000-10,000
SEMI Prime, Lifetime>1,000μs, Light scratches
n-type Si:P
[111] ±0.5°
4″
525
P/E
FZ >5,000
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[111-1° towards[110]] ±0.5°
4″
525
P/E
FZ >5,000
SEMI TEST (scratches on back-side)
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 5,000-7,000
SEMI Prime, [...]
2019-03-05meta-author
New graphene fabrication method uses silicon carbide template
Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far.
(PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]
2018-05-17meta-author
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author