PAM-01C is a low noise and high gain charge sensitive preamplifier. It can be used as a key part for semiconductor detector, such as CZT and Si, and other detecting signal readout.
1. Charge Sensitive Pre-amplifier Chip Specifications Comparison
Brands
(PAM-01C)
Gremat(PAM-110)
Dimensions
24×15×3 mm3
22.7×21×3.4 mm3
Weight
5g
2.5g
Power
<0.3W
0.66W
Powered by
±12V
±12V
Operation temperature
-20℃-+40℃
-20℃-+40℃
Equivalent noise level
ENC:180e-
ENC:260e-
Falling [...]
2019-04-25meta-author
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and [...]
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111] ±0.5°
4″
1000
P/E
<0.01
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° CW from Primary
n-type Si:P
[110] ±0.5°
4″
500
P/P
3-10
SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
n-type Si:P
[110] ±0.3°
4″
525
P/P
3-10
SEMI [...]
2019-03-05meta-author
PAM XIAMEN offers Single crystal SrLaGaO4.
Single crystal SrLaGaO4, (100), 10×9.8×0.5mm 1sp
Single crystal SrLaGaO4, (001), 10x3x0.5mm , one side polished
Single crystal SrLaGaO4, (001), 10x5x0.5mm , one side polished
Single crystal SrLaGaO4, (100), 10x10x0.5mm 2sp
Single crystal SrLaGaO4, (100), 10x3x0.5mm , one side [...]
2019-05-14meta-author
PAM-XIAMEN, one of leading GaN substrate manufacturers, offers 10*10mm2 N-Type Freestanding GaN Substrate. To get more specific information please see the table below:
1. N-Type Freestanding GaN Substrate Specification
Item
PAM-FS-GAN-50-N
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in [...]
2020-08-17meta-author
PAM XIAMEN offers Single-emitter LD Chip 880nm @8W.
Brand: PAM-XIAMEN
Wavelength: 880nm
Stripe width: 150um
Output Power: 8W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author