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4″ Silicon Wafer-17

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 4″ 500 P/P 1-100 SEMI Prime, TTV<1μm, With Lasermark n-type Si:P [100-4°] 4″ 525 P/E/P 1-10 SEMI Prime n-type Si:P [100] 4″ 600 P/P 1-100 SEMI Prime, TTV<2μm, Bow<20μm, Warp<30μm n-type Si:P [100] 4″ 1000 P/P 1-20 SEMI Prime n-type Si:P [100] 4″ 2500 P/P 1-100 SEMI Prime, Individual cst n-type Si:Sb [100] 4″ 450 P/E ~0.03 SEMI Prime n-type Si:Sb [100] 4″ 400 P/E ~0.02 SEMI Prime n-type Si:Sb [100] ±0.2° 4″ 250 P/P 0.01-0.05 SEMI Prime n-type Si:Sb [100] 4″ 310 ±15 P/P 0.010-0.025 SEMI Prime, TTV<1μm n-type Si:Sb [100] 4″ 600 P/E 0.01-0.03 Strange Flats n-type Si:Sb [100-4°] 4″ 1500 P/E/P 0.005-0.030 SEMI Prime n-type Si:Sb [100] 4″ 1500 P/E/P 0.001-0.030 SEMI Prime n-type Si:P [111] 4″ 1500 P/E >20 SEMI Prime n-type Si:P [111] 4″ 250 P/E 18-25 SEMI Prime n-type Si:P [111] 4″ 250 P/E 18-25 SEMI Prime n-type Si:P [111] 4″ 280 P/E 2-5 SEMI Prime n-type Si:P [111] 4″ 2500 P/P 2.0-2.5 SEMI Prime, [...]

2019-03-06 Read more...

4″ Silicon Wafer-16

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100-6°] 4″ 525 P/E 1-100 SEMI Prime p-type Si:B [100] 4″ 350 P/E 0.08-0.12 SEMI Prime, TTV<5μm p-type Si:B [100-4°] ±0.5° 4″ 381 P/E 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 800 P/EP 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 3100 P/P CZ 0.006-0.009 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 525 P/E 0.0042-0.0047 SEMI Prime p-type Si:B [100] 4″ 150 ±15 P/P 0.001-0.005 SEMI Prime, TTV<2μm p-type Si:B [111-3°] 4″ 300 P/E 3-4 SEMI Prime p-type Si:B [111-3°] 4″ 400 P/E 0.015-0.018 SEMI Prime p-type Si:B [111] 4″ 525 P/E 0.005-0.006 SEMI Prime p-type Si:B [111-1.5°] 4″ 525 P/E 0.002-0.004 SEMI Prime p-type Si:B [111] 4″ 300 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] ±0.5° 4″ 525 P/P 20-80 SEMI Prime @ [111] – Secondary 70.5° CW from Primary n-type Si:P [110] 4″ 1000 P/E 12-15 n-type Si:P [100] 4″ 400 P/E 32-70 SEMI [...]

2019-03-06 Read more...

4″ Silicon Wafer-15

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [211] ±0.1° 4″ 275 P/P FZ >3,000 SEMI Prime, TTV<2μm Intrinsic Si:- [111] ±0.5° 4″ 500 P/P FZ >25,000 SEMI Prime p-type Si:B [110] ±0.5° 4″ 525 P/E 4-6 SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF p-type Si:B [110] 4″ 525 P/E 2-10 PF<111> SF 109.5° p-type Si:B [100] 4″ 300 P/E 800-5,400 SEMI Prime p-type Si:B [100] 4″ 500 P/P 10-20 SEMI Prime p-type Si:B [100] 4″ 3000 P/E/P 10-15 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 250 P/E 8-12 SEMI Prime p-type Si:B [100] 4″ 275 P/P 7-14 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 300 P/E 7-14 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 1000 P/E 6-7 SEMI Prime p-type Si:B [100] 4″ 1600 P/P ~6 SEMI Prime, Individual [...]

2019-03-05 Read more...

4″ Silicon Wafer-14

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:As [111-4°] ±0.5° 4″ 325 P/E 0.001-0.005 SEMI Prime, Back Surface: Sand blasted with LTO seal n-type Si:As [111-4°] ±0.5° 4″ 300 P/E 0.001-0.005 SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers n-type Si:As [111-2°] ±0.5° 4″ 400 P/EOx 0.001-0.004 {0.0018-0.0036} SEMI Prime, Epi edges, 0.5μm LTO n-type Si:As [111-4°] ±0.5° 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111] ±0.5° 4″ 1000 P/E 0.001-0.005 {0.0031-0.0040} SEMI Prime, TTV<4μm, Bow<10μm, Warp<20μm n-type Si:As [111-4°] 4″ 525 L/L SEMI TEST  (2nd @ [...]

2019-03-05 Read more...

4″ Silicon Wafer-13

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [211] ±0.5° 4″ 1,500 ±15 P/P 0.01-0.02 SEMI Prime, TTV<1μm n-type Si:Sb [211] ±0.5° 4″ 1600 C/C 0.01-0.02 SEMI Test, Wafers can be polished for additional fee n-type Si:P [111] 4″ 1200 P/P 35-85 SEMI Prime n-type Si:P [111] ±0.5° 4″ 1500 P/E >20 {24-29} SEMI Prime, TTV<5μm, in Empak cassettes of 2 wafers n-type Si:P [111] ±0.5° 4″ 250 P/E 18-25 SEMI Prime n-type Si:P [111] ±0.5° 4″ 500 P/P 11-15 SEMI Prime, Both-sides Epi Ready polished n-type Si:P [111] 4″ 280 P/E 1.3-2.7 SEMI Prime n-type Si:P [111] ±0.5° 4″ 280 P/E 1.3-2.7 SEMI Prime n-type Si:P [111] ±0.5° 4″ 525 P/E SEMI Prime n-type Si:P [111] ±0.5° 4″ 750 P/P 1-100 SEMI [...]

2019-03-05 Read more...

4″ Silicon Wafer-12

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 4″ 525 P/P 1-100 SEMI Prime, TTV<5μm n-type Si:P [100] 4″ 525 P/E 0.3-0.5 SEMI n-type Si:P [100] 4″ 300 P/E 0.29-0.31 SEMI Prime n-type Si:P [100] 4″ 200 P/P 0.10-0.15 SEMI Test, Not sealed both sides scratched n-type Si:P [100] 4″ 200 P/P 0.10-0.15 SEMI Test, Both sides with scratches n-type Si:P [100] 4″ 200 P/E 0.10-0.15 SEMI Prime, Front-side Prime, Back-side Test grade polish n-type Si:Sb [100] 4″ 525 P/E 0.020-0.022 Prime n-type Si:Sb [100-6° towards[110]] ±0.5° 4″ 525 P/E 0.015-0.020 SEMI Prime n-type Si:Sb [100] 4″ 525 P/E 0.011-0.014 Prime n-type Si:Sb [100] 4″ 305 ±3 P/P 0.010-0.025 SEMI Prime, TTV<1μm n-type Si:Sb [100] 4″ 525 P/E 0.01-0.02 SEMI Prime, TTV<5μm n-type Si:Sb [100] 4″ 525 P/E 0.01-0.02 SEMI Prime n-type Si:As [100] 4″ 525 P/E 0.0025-0.0035 SEMI Prime n-type Si:As [100] 4″ 525 P/E 0.0025-0.0035 SEMI Prime n-type Si:As [100] 4″ 545 E/E 0.002-0.004 SEMI n-type Si:As [100] 4″ 525 P/P 0.001-0.005 SEMI Prime n-type [...]

2019-03-05 Read more...

4″ Silicon Wafer-11

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 4″ 525 P/E SEMI Prime n-type Si:P [100] 4″ 525 P/E 7-11 SEMI Prime n-type Si:P [100] 4″ 224 P/E 5-10 SEMI Flats (two), Cassette of 12 + 13 wafers n-type Si:P [100] 4″ 224 BROKEN 5-10 SEMI Test n-type Si:P [100] 4″ 500 P/P 4-6 SEMI Prime n-type Si:P [100] 4″ 350 ±10 P/P 3-5 SEMI Prime n-type Si:P [100] 4″ 350 P/P 3-5 SEMI Test, Haze, pits, scratches n-type Si:P [100] 4″ 450 C/C 3-5 SEMI Prime n-type Si:P [100] 4″ 525 P/P 3-9 SEMI Prime n-type Si:P [100] 4″ 525 P/E 3-9 SEMI Prime n-type Si:P [100] 4″ 525 P/E 3-9 SEMI Prime, TTV<5μm n-type Si:P [100] 4″ 500 ±10 P/P 2-5 SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in [...]

2019-03-05 Read more...

4″ Silicon Wafer-10

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] ±0.5° 4″ 1000 P/E <0.01 SEMI Prime n-type Si:P [110] ±0.5° 4″ 525 P/P 20-80 SEMI Prime @ [111] – Secondary 70.5° CW from Primary n-type Si:P [110] ±0.5° 4″ 500 P/P 3-10 SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers n-type Si:P [110] ±0.3° 4″ 525 P/P 3-10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary [...]

2019-03-05 Read more...

4″ Silicon Wafer-9

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 400 P/P 0.001-0.005 SEMI Prime p-type Si:B [100] 4″ 500 P/P 0.001-0.005 SEMI Prime, Wafers with striation marks p-type Si:B [100] 4″ 525 P/P 0.001-0.005 SEMI Prime, TTV<5μm, Bow<15μm, Warp<30μm p-type Si:B [100] 4″ 525 P/E 0.001-0.002 SEMI Prime, TTV<4μm p-type Si:B [100] 4″ 525 P/E 0.001-0.005 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 525 BROKEN 0.001-0.005 Broken wafer (shattered into many pieces) p-type Si:B [100] 4″ 800 C/C 0.001-0.005 SEMI, With striation marks p-type Si:B [100] 4″ ? P/P SEMI Test p-type Si:B [100] 4″ 375 P/E <0.0015 {0.00091-0.00099} SEMI Prime, TTV<3μm p-type Si:B [111] 4″ 350 P/E 2-3 Prime, NO Flats p-type Si:B [111] 4″ 1000 P/P 1-10 SEMI Prime, Cassettes of 10 and 10 wafers p-type Si:B [111] 4″ 1000 P/P 1-10 SEMI Prime p-type [...]

2019-03-05 Read more...

4″ Silicon Wafer-8

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 2100 P/E 1-100 SEMI Prime, Manual Edges p-type Si:B [100] 4″ 3000 P/P 1-10 SEMI Prime p-type Si:B [100] 4″ 3175 P/P 1-10 SEMI Prime, TTV<8μm p-type Si:B [100] 4″ 3200 P/E 1-100 SEMI Prime, Sealed as group of 9 wafers p-type Si:B [100] 4″ 4000 P/P 1-100 SEMI Prime p-type Si:B [100] 4″ 4000 P/P 1-100 SEMI Prime p-type Si:B [100] 4″ 5000 P/E 1-100 Prime, NO Flats p-type Si:B [100] 4″ 890 ±15 P/P 0.5-10.0 SEMI TEST (Scratches), TTV<8μm p-type Si:B [100] ±0.2° 4″ 300 P/P 0.1-0.3 SEMI Prime p-type Si:B [100] ±1° 4″ 490 ±5 P/P 0.1-1.0 SEMI Prime, TTV<0.8μm p-type Si:B [100] 4″ 525 P/E 0.1-0.2 SEMI Prime p-type Si:B [100] 4″ 350 P/E 0.095-0.130 SEMI Prime p-type Si:B [100-6° towards[110]] ±0.5° 4″ 525 P/E 0.015-0.020 SEMI Prime p-type Si:B [100-6° towards[110]] ±0.5° 4″ 525 P/E 0.015-0.020 SEMI [...]

2019-03-05 Read more...