Single-emitter LD Chip 808nm @10W
Single-emitter LD Chip 808nm @10W
PAM200914-LD-CHIP-808nm
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm
| Operation | Symbol | Min. | Typ. | Max. | Unit |
| Center wavelength | λ | — | 808 | — | nm |
| Output powe | P。 | — | 10.5 | — | w |
| Operation mode | — | — | CW | — | — |
| Geometrical | |||||
| Emitter width | w | — | 190 | — | μm |
| Cavity length | L | — | 4000 | — | μm |
| Chip width | W | — | 500 | — | μm |
| Chip height | H | — | 150 | — | μm |
| Electro Optical Data | |||||
| Threshold curen | Ith | — | 1.6 | — | A |
| Operating current | Iop | — | 10 | — | A |
| Operating voltage | Vop | — | 1.8 | — | V |
| Slope efficiency | ηd=PJ(lop-Ith) | — | 1.2 | — | WIA |
| Total conversion efficiency | η=Po/(lopxVop) | — | 58 | — | % |
| Slow axis divergence | θn” | — | 10 | — | degrees |
| Fast axis divergence | θ1 | — | 35 | — | degrees |
| Spectral width | △λ | — | 3 | — | nm |
| Polarization | — | — | TE | — | — |
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