PAM-XIAMEN can offered SiC wafers, specific specifications and parameters can be found in: https://www.powerwaywafer.com/sic-wafer
4H-SiC single crystal has excellent characteristics such as wide bandgap, high carrier mobility, high thermal conductivity, and good stability. It has broad application prospects in high-power electronics, radio frequency/microwave electronics, and quantum information. [...]
2024-03-15meta-author
Computer modeling of surface interactions and contamin
Highlights
•
Dynamics of contaminant removal from the surface of micro/nanotrench is simulated.
•
The trench is rectangular and made of one or two different materials.
•
Various diffusivities and surface characteristics are considered in the model.
•
In multimaterial trench, cleaning dynamics strongly depends on [...]
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orie
Res (Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM2312
100mm
P
B
<100>
0-100
500um
SSP
Test
The ever-versatile 4″ Test-Grade. One of our most popular items!
PAM2313
100mm
P
B
<100>
0-100
500um
DSP
Test
Double-Side Polished Silicon Wafers at affordable prices!
PAM2314
100mm
N
P
<100>
0-100
500um
DSP
Test
Double Side Polished silicon wafers, test grade.
PAM2315
100mm
N
P
<100>
0-100
500um
SSP
Test
Silicon wafers, N-type, Test [...]
2019-02-19meta-author
PAM XIAMEN offers Middium and Small Size Photomask.
Chromium Plate Accuracy (Standard Size:6inch Quartz)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
3μm/3μm
5μm/5μm
10μm/10μm
CD Control
±0.1μm
±0.3μm
±0.5μm
±1.0μm
Total Pitch Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Registration Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Overlay Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Orthogonality
±0.5μrad
±0.75μrad
±1.0μrad
±2.0μrad
Chrome Plate Material (Photomask Blank Plate)
Material
Soda Lime Glass、Quartz
Max. Size
3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″
Normal Size
1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm
Thickness
6.35±0.2mm (QZ)
Film Type
Low Reflectance Chrome
Optical Density(λ=450nm)
Between Plates3.0±0.3 In Plate±0.3
Reflectivity(λ=436nm)
Between Plates10±5% In Plate±2%
Main application areas:
1. IC Bumping, [...]
2019-07-04meta-author
The long-wavelength InGaAsN quantum well laser based on GaAs substrate is one of the most promising development directions. InGaAsN laser structures are usually grown by molecular beam epitaxy (MBE) or metal organic vapor deposition (MOCVD). InGaNAs material is a promising material for long wavelength [...]
Semiconductor lasers in the near-infrared band (760-1060nm) based on GaAs substrates are the most mature and most widely used, and have already been commercialized. We can supply GaAs laser diode wafer for a wavelength of 940nm. Moreover, a variety of laser wafers with different wavelengths [...]
2022-07-28meta-author