Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm?
A: Sure, no problem
2018-06-19meta-author
Q:We request for the following items
1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm
2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 [...]
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers?
A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
2018-06-19meta-author
Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range?
A: We can offer misorientation in low degree, no problem.
2018-06-19meta-author
Q:As to the wafer dicing – is it possible to get a non-rectangular dicing? such as 6mm x 8mm size?
A:No problem, any size is workable.
2018-06-19meta-author
Q: Please let us know if you could supply below wafer, qty 25/50/300.
Gallium Arsenide wafers, P/P
150.00±0.25 mm) 6″Ø×650±25µm,
VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°,
u > 4,000cm²/Vs,
Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1,
TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm,
Certificate: obligatory, Sealed under nitrogen in single wafer cassette
A: Yes, will check the [...]
2018-09-13meta-author