News

Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020

Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020 Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive based on performance gains, reckons [...]

2012-11-09 Read more...

In Q4 Discount prices for Universities and Research Institutes

In Q4 Discount prices for Universities and Research Institutes We are pleased to inform that PAM-XIAMEN announces the introduction of special Q4 discount prices for universities and research institutes for small size GaN C-plane with n-type and semi-insulating wafers, which are currently on the company’s stock, currently stock size: 5mm*5.5mm, [...]

2012-10-18 Read more...

Bulk GaN Crystals Grown by HVPE

Bulk GaN Crystal Grown by HVPE We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor deposition on (0 0 0 [...]

2012-10-16 Read more...

Global and China GaAs-based Device Market

Global and China GaAs-based Device Market   Distinct from traditional silicon semiconductor, gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V semiconductor and is mainly used in handset RF front end like power amplifier (PA). In the 4G era, handset RF front end becomes [...]

2012-09-29 Read more...

Flipping 60 GHz transistors

InGaAs HEMTs form two-stage gain blocks delivering 9 dB of gain while consuming just 20 mW A TEAM of Taiwanese engineers has used flip-chip packaging to build anInGaAs HEMT delivering up to 6.5 dB of gain at 60 GHz. The researchers argue that one of the strengths of flip-chip technology is [...]

2012-09-10 Read more...

Yellow and Green Luminescence in a Freestanding GaN Template

Yellow and Green Luminescence in a Freestanding GaN Template We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV and a green luminescence (GL) [...]

2012-09-04 Read more...

Veeco MBE reactor for laser diodes

Veeco MBE reactor for laser diodes   IPG Photonics adds 4th Veeco MBE reactor for laser diodes Aug 29, 2012 The tool will be used to manufacture gallium arsenide based devices Veeco Instruments has recently completed installation of a GEN2000 Edge MBE system at IPG Photonics Corporation. The system was delivered to further expand their production of [...]

2012-08-30 Read more...

GaN whitepaper

Advantech Wireless releases GaN whitepaper The company’s paper discusses gallium nitride based solid state power amplifiers for satellite communication Advantech Wireless, a Canadian-based manufacturer of broadcast-quality Satellite, RF Equipment and Microwave Systems has released a new whitepaper titled, “A new generation of Gallium Nitride (GaN) based Solid State Power Amplifiers for [...]

2012-08-30 Read more...

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry SLOW RAMP-UP BUT HUGE EXPECTATIONS The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies are selling products on the open market. [...]

2012-07-11 Read more...

PAM-XIAMEN Offers Larger Free-Standing Semi-Insulating GaN Substrates

PAM-XIAMEN Offers Larger Free-Standing Semi-Insulating GaN Substrates Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″ size native semi-insulating GaN (SI GaN) substrates,which is on mass production in 2011. This new product represents a natural addition [...]

2012-07-09 Read more...