PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size:
1. Specifications of SiC Boule Crystal
No.1: 4″ SiC Boule Crystal, Production Grade
Polytype: Production- 4H
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2020-05-19meta-author
Sapphire ingot can be offered by PAM-XIAMEN, one of sapphire ingot manufacturers. The chemical composition is alumina and is composed of three oxygen atoms and two aluminum atoms covalently bonded together. Sapphire crystal structure is a hexagonal lattice structure, and the commonly used section [...]
2021-09-10meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-7
GQ56b Silicon wafers, per SEMI Prime, P/P 6″Ø×675±10µm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 10,000 Ohmcm,
Both-sides-polished, One SEMI Flat
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
PAM XIAMEN offers Boron Nitride Film on Silicon Wafer.
Boron Nitride Film on Silicon Wafer , 24 nm / 4″ — BN-Si-100-24nm
Boron nitride is a chemical compound with chemical formula BN, consisting of equal numbers of boron and nitrogen atoms. BN is isoelectronic [...]
2019-04-26meta-author
PAM XIAMEN offers GaP Substrtaes (110).
GaP Wafer, undoped (110) 10x10x0.45 mm, 1sp
GaP Wafer, undoped (110) 10x10x0.5 mm, 2sp
GaP Wafer, undoped (110) 5x5x0.2 mm, 2sp
GaP Wafer, undoped (110) 5x5x0.3 mm, 1sp”
GaP Wafer, undoped (110) 5x5x0.3 mm, 2sp
For more information, [...]
2019-04-22meta-author
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
2013-04-12meta-author