PAM-XIAMEN, one of leading gallium arsenide wafer manufacturers, can offer Gallium Arsenide(GaAs) wafer with high mobility. Normally mobility of n type/Si doped GaAs is above 1000cm2/V.s, mobility of p type/Zn doped GaAs is above 50~120cm2/V.s,and mobility of undoped GaAs is require to above 3500cm2/V.s, [...]
2020-03-06meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
4″
1000
P/E
1-10
SEMI Prime
n-type Si:Sb
[111-4°]
4″
450
P/E
0.025-0.045
SEMI Prime
n-type Si:Sb
[111-2.5°]
4″
625
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[111]
4″
525
P/E
0.016-0.020
SEMI Prime
n-type Si:Sb
[111-4°]
4″
525
P/E
0.010-0.020
SEMI Prime
n-type Si:Sb
[111-2°]
4″
380
P/E
0.008-0.018
SEMI Prime
n-type Si:Sb
[111-3°]
4″
400
P/E
0.008-0.018
SEMI Prime
n-type Si:Sb
[111-3°]
4″
400
P/E
0.005-0.018
SEMI Prime
n-type Si:As
[111-3°]
4″
400
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-3°]
4″
400
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-2.5°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-3°]
4″
525
P/E
0.001-0.005
SEMI Prime
Intrinsic Si:-
[100]
4″
525
P/E
400-1,000
SEMI Prime
For more information, please visit our website: https://www.powerwaywafer.com,
send us [...]
2019-03-06meta-author
Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films
Silicon-on-insulator (SOI) wafers made by direct wafer bonding are widely used as starting substrates for microelectromechanical systems (MEMS) fabrication. Adding another layer next to the SiO2 SOI, or replacing it with another [...]
PAM XIAMEN offers Yb YAG Ytterbium (Yb) doped Yttrium Aluminium Garnet Laser Crystal.
Ytterbium – Yb:YAG is a very promising laser crystal and is more suitable for diode-pumping than the commonly used Nd-doped YAG crystals. Compared with the traditional Nd:YAG crystal, Yb:YAG crystal has a much wider [...]
2019-03-15meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (110)
BaTiO3 (110) 5x5x0.5 mm, 1SP, Substrate grade(with domains)
BaTiO3 (110) 5x5x1.0 mm, 2SP, Substrate grade(with domains)
BaTiO3 (110) 10 x 10 x0.5 mm, 1SP, Substrate grade (with domains)
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-04-17meta-author
PAM XIAMEN offers 5″ FZ Silicon wafers
Silicon wafers, per SEMI Prime,
P/P 5″Ø×240±10µm,
FZ p-type Si:B[100]±0.5°,
Ro=(240-280)Ohmcm,
TTV<5µm, Bow<25µm, Warp<25µm,
Both-sides-polished,
SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author