AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification
 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

· Orange LED Wafer Substrate:      

 

 

 

 

 

 

 

P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate
·Chip Sepcification (Base on 7mil*7mil chips)        
Parameter
Chip Size 7mil(±1mil)*7mil(±1mil)
Thickness 7mil(±1mil)
P Electrode U/L
N Electrode AU
Structure Such as right-shown
·Optical-elctric characters            
Parameter Condition Min. Typ Max. Unit
Forward voltage If=10μA 1.35 V
Reverse voltage If=20mA 2.2 V
Reverse current V=10V 2 μm
Wavelength If=20mA 565 575 nm
Half wave width If=20mA 10 nm
·Light intensity characters            
Brightness code LA LB LC LD LE LF LG LH
IV(mcd) 10-15 15-20 20-25 25-30 30-35 35-40 40-50 50-60

 

Source:PAM-XIAMEN

 

If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com orpowerwaymaterial@gmail.com.

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