AlGaInP LED Chip Sepcification
| AlGaInP LED Chip Sepcification | ||||||||
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| · Orange LED Wafer Substrate: |
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| P+GaAs | ||||||||
| p-GaP | ||||||||
| p-AlGaInP | ||||||||
| MQW | ||||||||
| n-AlGaInP | ||||||||
| DBR n-ALGaAs/AlAs | ||||||||
| Buffer | ||||||||
| GaAs substrate | ||||||||
| ·Chip Sepcification (Base on 7mil*7mil chips) | ||||||||
| Parameter | ||||||||
| Chip Size | 7mil(±1mil)*7mil(±1mil) | |||||||
| Thickness | 7mil(±1mil) | |||||||
| P Electrode | U/L | |||||||
| N Electrode | AU | |||||||
| Structure | Such as right-shown | |||||||
| ·Optical-elctric characters | ||||||||
| Parameter | Condition | Min. | Typ | Max. | Unit | |||
| Forward voltage | If=10μA | 1.35 | ┄ | ┄ | V | |||
| Reverse voltage | If=20mA | ┄ | ┄ | 2.2 | V | |||
| Reverse current | V=10V | ┄ | ┄ | 2 | μm | |||
| Wavelength | If=20mA | 565 | ┄ | 575 | nm | |||
| Half wave width | If=20mA | ┄ | 10 | ┄ | nm | |||
| ·Light intensity characters | ||||||||
| Brightness code | LA | LB | LC | LD | LE | LF | LG | LH |
| IV(mcd) | 10-15 | 15-20 | 20-25 | 25-30 | 30-35 | 35-40 | 40-50 | 50-60 |
Source:PAM-XIAMEN
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