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PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers

PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers for 650V power switching device fabrication. Recently, PAM XIAMEN, a leading supplier of GaN epitaxial wafers, announced that it has successfully developed “6-inch silicon-on-silicon (GaN-on-Si) epitaxial wafers” and its 6 inch size is on mass production. 1. PAM XIAMEN is [...]

2019-02-11 Read more...

Strain-modulated Ge superlattices

We present a numerical study of the electronic and optical properties of a model single-element superlattice made of a periodic sequence of relaxed and strained regions of a germanium crystal, realized by means of an externally applied strain. We adopt the tight-binding model to evaluate the strain-driven modifications of [...]

2019-01-28 Read more...

PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain

PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain   Xiamen Powerway focuses on high-end compound semiconductor epitaxial R&D and manufacturing. In 2018, the 4-inch and 6-inch VCSELs were mass-produced and entered the mainstream chip manufacturers in Taiwan. Utilizing state-of-the-art MBE (Molecular Epitaxial Beam Epitaxy) [...]

2019-01-21 Read more...

GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE

GaAs pn diodes with heavily carbon-doped p-type GaAs grown by MOMBE were fabricated. The I-V and C-V characteristics were not significantly affected by the hole concentration of the p-GaAs although a lattice mismatch at the junction generates misfit dislocations. A good I-V characteristic with the ideality factor of 1.3 [...]

2019-01-14 Read more...

From graphene to silicon carbide: ultrathin silicon carbide flakes

This study presents a new ultrathin SiC structure prepared by a catalyst free carbothermal method and post-sonication process. We have found that merging ultra-light 3D graphene foam and SiO together at high temperature leads to the formation of a complex SiC structure consisting of 3D SiC foam covered with [...]

2019-01-09 Read more...

Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition

The electrical characteristics of GaN p–n junctions grown on freestanding GaN substrates by metal–organic chemical vapor deposition were investigated. The current–voltage (I–V) characteristics of the GaN p–n diode showed relatively low values and, little temperature dependence of the reverse leakage current. The breakdown voltage of the GaN p–n diode [...]

2018-12-25 Read more...

Morphology and Raman scattering spectrum of GaN nanowires embedded in nanochannels of template

The hexagonal wurtzite GaN nanowires embedded in the nanochannels of anodic alumina membrane were achieved by the direct reaction of Ga vapour with a constant flowing ammonia atmosphere. X-ray diffraction (XRD), scanning electron microscopy and transmission electron microscopy were used to measure the size and structures of the samples. [...]

2018-12-14 Read more...

Kerfless epitaxial silicon wafers with 7 ms carrier lifetimes and a wide lift-off process window

Silicon wafers contribute significantly to the photovoltaic module cost. Kerfless silicon wafers that grow epitaxially on porous silicon (PSI) and are subsequently detached from the growth substrate are a promising lower cost drop-in replacement for standard Czochralski (Cz) wafers. However, a wide technological processing window appears to be a [...]

2018-11-26 Read more...

Enhancement of minority carrier lifetimes in n- and p-type silicon wafers using silver nanoparticle layers

The quasi-steady state photo conductance technique is employed to probe effective minority carrier lifetime (τ eff) modifications after integrating silver nanoparticles (Ag NPs) on n-type and p-type silicon wafers with a native oxide surface. Our observations reveal that τ eff modification is very sensitive to Ag NPs size, surface [...]

2018-11-21 Read more...

How will the SiC and GaN power semiconductor market develop?

The development of SiC and GaN power semiconductor market The current state of SiC technology and market, and the development trend in the next few years. The SiC device market is promising. Sales of Schottky barrier diodes have matured and MOSFET shipments are expected to increase significantly over the next three [...]

2018-11-14 Read more...